铁磁 MnBi 薄膜中的反常 Hall 效应和电子输运。
Anomalous Hall effect and electron transport in ferromagnetic MnBi films.
机构信息
Nebraska Center for Materials and Nanoscience and Department of Physics and Astronomy, University of Nebraska, Lincoln, NE 68588, USA.
出版信息
J Phys Condens Matter. 2011 Oct 26;23(42):426001. doi: 10.1088/0953-8984/23/42/426001. Epub 2011 Oct 3.
The electron transport properties of highly c-axis oriented MnBi thin films of various thicknesses have been investigated. Samples are metallic but the low temperature resistivity shows an unusual T(3) dependence. Transverse Hall effect measurements show that both the ordinary and anomalous Hall coefficients decrease with decreasing temperature below 300 K, but the ordinary Hall coefficient (R(0)) undergoes a sign reversal around 105 K, where the magnetic anisotropy also changes sign. Analysis of the Hall data for various samples shows that the anomalous Hall coefficient (R(s)) exhibits a strong ρ(2) dependence, where ρ is the longitudinal resistivity.
我们研究了不同厚度的高度 c 轴取向 MnBi 薄膜的电子输运性质。这些样品是金属的，但低温电阻率呈现出不寻常的 T(3)依赖性。横向 Hall 效应测量表明，在 300 K 以下，普通和反常 Hall 系数都随温度降低而减小，但普通 Hall 系数（R(0)）在 105 K 左右发生符号反转，此时磁各向异性也发生符号变化。对各种样品的 Hall 数据的分析表明，反常 Hall 系数（R(s)）表现出强烈的 ρ(2)依赖性，其中 ρ 是纵向电阻率。
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