Department of Chemistry, University of Auckland, Private Bag 92019, Auckland, New Zealand.
J Colloid Interface Sci. 2012 Feb 15;368(1):447-55. doi: 10.1016/j.jcis.2011.10.073. Epub 2011 Nov 10.
Adsorption and oligomerization of H(4)SiO(4) at the amorphous TiO(2)-aqueous interface were studied using in situ Attenuated Total Reflectance Infrared (ATR-IR) and ex situ solid state (29)Si nuclear magnetic resonance (NMR). The ATR-IR spectra indicate that a monomeric silicate species is present at low silicate surface concentration (Γ(Si)). Above a threshold Γ(Si) linear silicate oligomers are formed and these oligomers dominate the surface at high Γ(Si). Interestingly the ATR-IR spectra of H(4)SiO(4) on the TiO(2) surface are very similar to those previously observed on the poorly ordered iron oxide phase ferrihydrite. The (29)Si NMR spectrum of silicate on the TiO(2) surface shows the presence of Si in three states with chemical shifts corresponding to isolated monomers (Q(0)), the ends of linear oligomers (Q(1)) and the middle of linear oligomers (Q(2)). The ratio of the area of the Q(1) and Q(2) peaks was ≈2:1 which is consistent with the proposed formation of linear silicate trimers by insertion of a solution H(4)SiO(4) between adjacent suitably orientated adsorbed silicate monomers. A structural interpretation indicates that the observed interfacial silicate oligomerization behavior is a general phenomenon whereby bidentate silicate monomers on oxide surfaces are disposed towards forming linear oligomers by condensation reactions involving their two terminal Si-OH groups. The high surface curvature of nanometer sized spheres inhibits the formation of interfacial silicates with a higher degree of polymerization.
采用原位衰减全反射红外(ATR-IR)和非原位固态(29)Si 核磁共振(NMR)研究了 H(4)SiO(4)在无定形 TiO(2)-水界面上的吸附和齐聚。ATR-IR 谱表明,在低硅酸盐表面浓度(Γ(Si))下存在单体硅酸盐物种。在高于阈值Γ(Si)时,线性硅酸盐齐聚物形成,这些齐聚物在高Γ(Si)时占据表面主导地位。有趣的是,H(4)SiO(4)在 TiO(2)表面的 ATR-IR 谱与之前在无序氧化铁相水铁矿上观察到的谱非常相似。TiO(2)表面硅酸盐的(29)Si NMR 谱表明,硅存在于三种状态,化学位移对应于孤立单体(Q(0))、线性齐聚物的末端(Q(1))和线性齐聚物的中间(Q(2))。Q(1)和 Q(2)峰的面积比约为 2:1,这与插入溶液 H(4)SiO(4)在相邻适当取向吸附的硅酸盐单体之间形成线性硅酸盐三聚体的建议一致。结构解释表明,观察到的界面硅酸盐齐聚化行为是一种普遍现象,其中氧化物表面上的双齿硅酸盐单体通过涉及其两个末端 Si-OH 基团的缩合反应倾向于形成线性齐聚物。纳米尺寸球体的高表面曲率抑制了具有更高聚合度的界面硅酸盐的形成。