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氧化锌的化学腐蚀法在薄膜硅太阳能电池中的应用。

Chemical etching of zinc oxide for thin-film silicon solar cells.

机构信息

IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.

出版信息

Chemphyschem. 2012 Jan 16;13(1):66-73. doi: 10.1002/cphc.201100738. Epub 2011 Dec 8.

Abstract

Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.

摘要

化学刻蚀广泛应用于溅射沉积氧化锌的表面纹理化,以实现薄膜硅太阳能电池中的光散射。基于文献中的实验结果和我们自己的结果,我们提出了一个模型,该模型根据结构材料特性和蚀刻剂解释了 ZnO 的蚀刻行为。所有晶界都容易受到蚀刻,达到一定的阈值,该阈值由沉积条件和蚀刻溶液定义。此外,还提供了几种通过特殊的准备和蚀刻步骤来改变蚀刻行为的方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a798/3531622/50dc6abe8f03/cphc0013-0066-fig001.jpg

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