Computational Chemistry Group, Department of Chemistry, University of Mauritius, Réduit, Mauritius.
J Phys Chem A. 2012 Mar 29;116(12):3215-23. doi: 10.1021/jp210735e. Epub 2012 Mar 20.
A systematic investigation on the neutral and anionic digallium tetraoxide, Ga(2)O(4) has been carried out by using density functional theory (DFT), second-order Møller-Plesset perturbation theory (MP2), and the coupled cluster approach with single and double substitutions and a perturbative treatment of the triple excitations [CCSD(T)]. The geometry of neutral Ga(2)O(4) has been proposed earlier, from an experimental study, to adopt a D(2d) symmetry (J. Phys. Chem. 1979, 83, 656). However, the current research reveals that, out of the several isomers considered for neutral and anionic digallium tetraoxide, the (3)B(1u) and (2)B(3g) of the planar D(2h) geometry (7a-D(2h)) are the lowest-energy states for Ga(2)O(4) and Ga(2)O(4)(-). Our computations rule out the D(2d) geometry (3-D(2d)) as a viable contender for neutral Ga(2)O(4). The (3)B(2) (3-D(2d)) state is located above the (3)B(1u) (7-D(2h)) state by at least 4.26 eV. The energies of the low lying states, geometrical parameters, and energetic features (VEDE, AEDE, and AEA) are reported. The AEA of Ga(2)O(4) is calculated to be 3.94 eV (B3LYP), 3.24 eV (MP2), 3.42 eV [CCSD(T)//B3LYP], and 3.38 eV [CCSD(T)//MP2], respectively. In addition, the dissociation energy, D(e), for the process Ga(2)O(4) ((3)B(1u)) → 2GaO(2) ((2)A(2)) is 3.59 eV (B3LYP), 5.08 eV (MP2), 4.82 eV [CCSD(T)//B3LYP], and 4.80 eV [CCSD(T)//MP2]. The results obtained in this work are critically analyzed, discussed, and compared with those of the analogous metal oxides.
我们采用密度泛函理论(DFT)、二阶 Møller-Plesset 微扰理论(MP2)和单双取代耦合簇方法以及微扰三重态处理 [CCSD(T)],对中性和阴离子二氧化二镓(Ga(2)O(4))进行了系统研究。从实验研究中,之前提出了中性 Ga(2)O(4)采用 D(2d)对称性(J. Phys. Chem. 1979, 83, 656)的假设。然而,目前的研究表明,在考虑的中性和阴离子二氧化二镓的几种异构体中,平面 D(2h)几何结构(7a-D(2h))的(3)B(1u)和(2)B(3g)(7a-D(2h))是 Ga(2)O(4)和 Ga(2)O(4)(-)的最低能量状态。我们的计算排除了 D(2d)几何结构(3-D(2d))作为中性 Ga(2)O(4)的可行竞争者。(3)B(2)(3-D(2d))态位于(3)B(1u)(7-D(2h))态之上,至少高出 4.26 eV。报告了低能态的能量、几何参数和能量特征(VEDE、AEDE 和 AEA)。Ga(2)O(4)的 AEA 分别计算为 3.94 eV(B3LYP)、3.24 eV(MP2)、3.42 eV [CCSD(T)//B3LYP]和 3.38 eV [CCSD(T)//MP2]。此外,Ga(2)O(4)((3)B(1u))→2GaO(2)((2)A(2))的离解能,D(e),分别为 3.59 eV(B3LYP)、5.08 eV(MP2)、4.82 eV [CCSD(T)//B3LYP]和 4.80 eV [CCSD(T)//MP2]。对这项工作的结果进行了批判性分析、讨论,并与类似金属氧化物的结果进行了比较。