Chang Hsu-Kai, Lee Si-Chen
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan.
Nanoscale Res Lett. 2012 Feb 27;7(1):155. doi: 10.1186/1556-276X-7-155.
With the rapid progress of nanotechnology, nanostructures with different morphologies have been realized, which may be very promising to enhance the performance of semiconductor devices. In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process. By controlling growth conditions, different SiGe nanostructures can be easily tuned. Structures and compositions of the nanostructures were determined by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The optical properties of various SiGe nanostructures revealed some dependence with their morphologies, which may be suitable for solar cell applications. The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.
随着纳米技术的飞速发展,已实现了具有不同形态的纳米结构,这对于提高半导体器件的性能可能非常有前景。在本研究中,通过化学气相沉积工艺合成了具有几种构型的硅锗纳米结构。通过控制生长条件,可以轻松调整不同的硅锗纳米结构。通过扫描电子显微镜、透射电子显微镜和X射线衍射确定了纳米结构的结构和组成。各种硅锗纳米结构的光学性质显示出与其形态有一定的相关性,这可能适用于太阳能电池应用。在纳米尺度上对硅锗形态的控制为生产多样的硅锗纳米结构提供了一条便捷途径,并为实现未来器件的集成创造了新机会。