Jang Kyungmin, Ishibashi Yoshifumi, Iwata Daisuke, Suganuma Hidenori, Yamada Tsutomu, Takemura Yasushi
Department of Electrical and Computer Engineering, Yokohama National University, Yokohama 240-8501, Japan.
J Nanosci Nanotechnol. 2011 Dec;11(12):10945-8. doi: 10.1166/jnn.2011.4052.
Nanolithography used in conjunction with atomic force microscopy (AFM) has attracted considerable attention as a technique for fabricating nanoscale structures. To obtain nanostructures and devices, AFM nanoscratching was performed on a photoresist and on NiFe at various values of the applied force, scan speed, and number of scan cycles. The scratching process was carried out using a diamond-coated tip on NiFe and a Si tip on the photoresist. By conducting scratching processes on NiFe and on the photoresist, we investigated the dependence of the size of the scratched part on the scratching parameters. These results show that the width and depth of the scratched part increase as the applied force and number of scan cycles increase, but not as the scan speed increases. This means that it is possible to control the size of the scratched parts by adjusting the applied force and number of scan cycles. AFM nanoscratching was then used to directly fabricate a nanoconstricted area with a width of 139 nm and a cross-sectional area of less than 300 nm2 was fabricated.
与原子力显微镜(AFM)结合使用的纳米光刻技术作为一种制造纳米级结构的技术已引起了相当大的关注。为了获得纳米结构和器件,在光致抗蚀剂和NiFe上以不同的外力值、扫描速度和扫描循环次数进行了AFM纳米划痕实验。划痕过程使用涂有金刚石的探针在NiFe上进行,而在光致抗蚀剂上使用硅探针。通过在NiFe和光致抗蚀剂上进行划痕过程,我们研究了划痕部分的尺寸对划痕参数的依赖性。这些结果表明,划痕部分的宽度和深度随着外力和扫描循环次数的增加而增加,但不随扫描速度增加。这意味着可以通过调整外力和扫描循环次数来控制划痕部分的尺寸。然后使用AFM纳米划痕直接制造了一个宽度为139nm的纳米收缩区域,并制造出了横截面积小于300nm²的区域。