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杂质对金属/氧化物界面内氧化影响的理论预测:以 S 在 Cu/Al2O3 中的作用为例。

Theoretical prediction of impurity effects on the internally oxidized metal/oxide interface: the case study of S on Cu/Al2O3.

机构信息

School of Materials Science and Engineering, Central South University, Changsha, 410083, China.

出版信息

Phys Chem Chem Phys. 2012 Aug 21;14(31):11178-84. doi: 10.1039/c2cp41079f. Epub 2012 Jul 11.

Abstract

A detrimental sulfur effect on adhesion is known for iron- and nickel-oxide interfaces, but has never been reported on copper-oxide interfaces. Here we present a first-principles based study on the effects of temperature, interfacial stoichiometry, Al activity, and S segregation on the internally oxidized Cu/α-Al(2)O(3) interface. The calculated "interfacial phase diagram" for temperatures of interest suggests that the equilibrium interface structure is near the transition between Al-rich and stoichiometric phases. The Al-rich type interface is significantly stronger than the stoichiometric counterpart. The S effect on the Cu/α-Al(2)O(3) interface is obvious: S strongly segregates to both types of interface, degrades the adhesion (by ∼65%) and also reduces the size stability of alumina particles in Cu.

摘要

已知铁和镍氧化物界面存在不利于粘附的硫效应,但铜氧化物界面从未有过相关报道。在此,我们基于第一性原理研究了温度、界面化学计量、Al 活性和 S 偏析对内部氧化的 Cu/α-Al(2)O(3)界面的影响。针对感兴趣温度的计算“界面相图”表明,平衡界面结构接近于富 Al 和化学计量相之间的过渡。富 Al 型界面比化学计量型界面强得多。S 对 Cu/α-Al(2)O(3)界面的影响是明显的:S 强烈偏析到两种类型的界面,降低了粘附力(约 65%),并降低了 Cu 中氧化铝颗粒的尺寸稳定性。

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