Fuel Cell Cutting-Edge Center (FC-Cubic), Technology Research Association, 2-3-26 Aomi, Tokyo 135-0064, Japan.
Phys Chem Chem Phys. 2013 Feb 7;15(5):1518-25. doi: 10.1039/c2cp43727a. Epub 2012 Dec 13.
Solutions of Nafion® with an ion exchange capacity (IEC) of 0.91 meq g(-1), which are on the verge of the formation of SO(3)H nanoclusters, were spin coated on silicon (Si), glassy carbon (GC) and platinum/silicon (Pt/Si) substrates to form films of up to 256 nm thickness. Nanostructure of the films was studied using Doppler broadening of annihilation radiation (DBAR), positron annihilation lifetime (PAL), X-ray photoelectron spectroscopy (XPS), an atomic force microscope (AFM) and contact angle measurements. Contact angles as low as 10 degrees indicate that the surface of dry ultrathin Nafion® films on Si is highly hydrophilic. XPS data of 10 nm thick, ultrathin film on Si show that oxygen concentration is enhanced and the SO(3)H group concentration, in other words, IEC on the surface is much higher than other films. The S parameter measured by DBAR of an ultrathin Nafion® film on Si is much higher than that of the films on the other substrates. We consider that a large number of hydrophilic, reversed micelle like SO(3)H groups are on the surface of the ultrathin Nafion® film on Si but not on the surface of other films. Positrons implanted into the film are trapped by the SO(3)H clusters, annihilating with the electrons of oxygen and exhibit the high S parameter. The SO(3)H concentration on the surface of thin Nafion® films on GC and Pt/Si substrates may not be so high as the threshold for the formation of a large number of SO(3)H clusters. Positrons implanted into the films annihilate mostly with fluorine atoms, resulting in a low S parameter. The film-substrate interaction plays an essential role in nanostructuring of Nafion® thin films, which may also be the case for Nafion® on the catalysts of polymer electrolyte fuel cells.
Nafion®溶液的离子交换容量 (IEC) 为 0.91 meq g(-1),处于形成 SO(3)H 纳米簇的边缘,旋涂在硅 (Si)、玻璃碳 (GC) 和铂/硅 (Pt/Si) 基底上,形成厚度高达 256 nm 的薄膜。使用湮没辐射多普勒展宽 (DBAR)、正电子湮没寿命 (PAL)、X 射线光电子能谱 (XPS)、原子力显微镜 (AFM) 和接触角测量研究了薄膜的纳米结构。接触角低至 10 度表明 Si 上干燥的超薄 Nafion®薄膜表面具有高度亲水性。XPS 数据表明,厚度为 10nm 的 Si 上超薄薄膜的氧浓度增强,SO(3)H 基团浓度(换句话说,IEC 表面远高于其他薄膜)。Si 上超薄 Nafion®薄膜的 DBAR 测量的 S 参数远高于其他基底上的薄膜。我们认为,大量亲水的、类似反向胶束的 SO(3)H 基团位于 Si 上超薄 Nafion®薄膜的表面,但不在其他薄膜的表面。注入薄膜的正电子被 SO(3)H 簇捕获,与氧电子湮没,表现出高 S 参数。GC 和 Pt/Si 基底上的薄 Nafion®薄膜表面的 SO(3)H 浓度可能没有达到形成大量 SO(3)H 簇的阈值。注入薄膜的正电子主要与氟原子湮没,导致 S 参数低。薄膜-基底相互作用在 Nafion®薄膜的纳米结构中起着重要作用,这在聚合物电解质燃料电池的催化剂上的 Nafion®也可能如此。