Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany.
Nanotechnology. 2013 Jan 25;24(3):035203. doi: 10.1088/0957-4484/24/3/035203. Epub 2012 Dec 21.
We investigated the transport properties of GaAs/InAs core/shell nanowires grown by molecular beam epitaxy. Owing to the band alignment between GaAs and InAs, electrons are accumulated in the InAs shell as long as the shell thickness exceeds 12 nm. By performing simulations using a Schrödinger-Poisson solver, it is confirmed that confined states are present in the InAs shell, which are depleted if the shell thickness is below a threshold value. The existence of a tubular-shaped conductor is proved by performing magnetoconductance measurements at low temperatures. Here, flux periodic conductance oscillations are observed which can be attributed to transport in one-dimensional channels based on angular momentum states.
我们研究了通过分子束外延生长的 GaAs/InAs 核/壳纳米线的输运性质。由于 GaAs 和 InAs 之间的能带排列,只要壳层厚度超过 12nm,电子就会在 InAs 壳层中积累。通过使用薛定谔-泊松求解器进行模拟,证实了在 InAs 壳层中存在受限态,如果壳层厚度低于一个阈值,受限态就会耗尽。通过在低温下进行磁导率测量,证明了存在管状导体。在这里,观察到了通量周期性电导振荡,这可以归因于基于角动量状态的一维通道中的输运。