Yu Shansheng, Zheng Weitao
Department of Materials Science, State Key Laboratory of Superhard Materials, and Key Laboratory of Automobile Materials, MOE, Jilin University, Changchun 130012, China.
J Nanosci Nanotechnol. 2013 Feb;13(2):1030-4. doi: 10.1166/jnn.2013.6123.
For graphene obtained by chemical vapor deposition, there are large amount of defects in the crystalline structures. The carbon atoms from the feedstock can attack the graphene surface in annealing process, which may be one of the reasons affecting the structure of graphene. In order to explore some defect structures on graphene, we investigate the adsorption of carbon adatoms and vacancies on graphene using first-principles calculations. It is demonstrated that the adatoms can form strong covalent bonds with the graphene and the C-C dimmer adsorption may be the most prolific defect model. The C adatom can even fill simple vacancy of graphene. Our numerical simulations also show that the defect structures can lead to the splitting of the mid-gap peak of perfect graphene in the electronic structures. It is suggested that its conductivity would be lower than that of the perfect graphene, which can explain the low mobility of the charge carriers in some experiments.
对于通过化学气相沉积获得的石墨烯,其晶体结构中存在大量缺陷。原料中的碳原子在退火过程中会攻击石墨烯表面,这可能是影响石墨烯结构的原因之一。为了探究石墨烯上的一些缺陷结构,我们使用第一性原理计算研究了碳原子吸附原子和空位在石墨烯上的吸附情况。结果表明,吸附原子可以与石墨烯形成强共价键,并且C-C二聚体吸附可能是最丰富的缺陷模型。C吸附原子甚至可以填充石墨烯的简单空位。我们的数值模拟还表明,缺陷结构会导致完美石墨烯电子结构中的带隙中间峰分裂。有人认为其电导率会低于完美石墨烯的电导率,这可以解释一些实验中载流子迁移率较低的现象。