Division of Functional Life Science, Faculty of Advanced Life Science, Hokkaido University, North 10, West 8, Kita-ku, Sapporo 060-0810, Japan; Division of Applied Physics, Faculty of Engineering, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan.
Brain Res. 2013 Oct 9;1534:22-32. doi: 10.1016/j.brainres.2013.08.004. Epub 2013 Aug 13.
The aim of this study was to clarify the saturation processes of excitatory and inhibitory synapse densities during the long-term development of cultured neuronal networks. For this purpose, we performed a long-term culture of rat cortical cells for 35 days in vitro (DIV). During this culture period, we labeled glutamatergic and GABAergic synapses separately using antibodies against vesicular glutamate transporter 1 (VGluT1) and vesicular transporter of γ-aminobutyric acid (VGAT). The densities and distributions of both types of synaptic terminals were measured simultaneously. Observations and subsequent measurements of immunofluorescence demonstrated that the densities of both types of antibody-labeled terminals increased gradually from 7 to 21-28 DIV. The densities did not show a further increase at 35 DIV and tended to become saturated. Triple staining with VGluT1, VGAT, and microtubule-associated protein 2 (MAP2) enabled analysis of the distribution of both types of synapses, and revealed that the densities of the two types of synaptic terminals on somata were not significantly different, but that glutamatergic synapses predominated on the dendrites during long-term culture. However, some neurons did not fall within this distribution, suggesting differences in synapse distribution on target neurons. The electrical activity also showed an initial increase and subsequent saturation of the firing rate and synchronized burst rate during long-term culture, and the number of days of culture to saturation from the initial increase followed the same pattern under this culture condition.
本研究旨在阐明体外培养神经元网络长期发育过程中兴奋性和抑制性突触密度的饱和过程。为此,我们对大鼠皮质细胞进行了为期 35 天的体外培养(DIV)。在这个培养期间,我们使用针对囊泡谷氨酸转运体 1(VGluT1)和囊泡 γ-氨基丁酸转运体(VGAT)的抗体分别标记谷氨酸能和 GABA 能突触。同时测量两种类型突触末梢的密度和分布。免疫荧光观察和后续测量表明,两种类型抗体标记的末梢的密度从 7 到 21-28 DIV 逐渐增加。在 35 DIV 时,密度没有进一步增加,趋于饱和。VGluT1、VGAT 和微管相关蛋白 2(MAP2)的三重染色使我们能够分析两种类型突触的分布,并揭示了两种类型突触末梢在胞体上的密度没有显著差异,但在长期培养过程中谷氨酸能突触在树突上占主导地位。然而,一些神经元不符合这种分布,表明靶神经元上的突触分布存在差异。电活动也表现出在长期培养过程中放电率和同步爆发率的初始增加和随后的饱和,从初始增加到饱和的培养天数遵循与这种培养条件下相同的模式。