利用金属有机化学气相沉积法通过简单地改变 V/III 比来实现 InAs/GaAs 量子点的大范围可调密度。

InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition.

机构信息

Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

出版信息

Nanoscale Res Lett. 2013 Aug 28;8(1):367. doi: 10.1186/1556-276X-8-367.

DOI:10.1186/1556-276X-8-367

PMID:23984719

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3765830/

Abstract

The complicated behaviors of InAs/GaAs quantum dots with increasing V/III ratio associated with several competing mechanisms have been described. The results demonstrate that the densities of InAs quantum dots can be tuned in a wide range from 105 to 1010 cm-2 by simply manipulating V/III ratio via metal-organic chemical vapor deposition. These results are mainly ascribed to the changes of coverage and In adatom migration length due to the increasing V/III ratio.

摘要

已经描述了与几种竞争机制相关的随着 V/III 比增加的 InAs/GaAs 量子点的复杂行为。结果表明，通过金属有机化学气相沉积（MOCVD）简单地通过改变 V/III 比，就可以将 InAs 量子点的密度在 105 到 1010 cm-2 的很宽范围内进行调节。这些结果主要归因于由于 V/III 比的增加而导致的覆盖率和 In 原子迁移长度的变化。