Zhang Sen, Zhao Yonggang, Xiao Xia, Wu Yizheng, Rizwan Syed, Yang Lifeng, Li Peisen, Wang Jiawei, Zhu Meihong, Zhang Huiyun, Jin Xiaofeng, Han Xiufeng
1] Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, P. R. China [2] College of Science, National University of Defense Technology, Changsha 410073, P. R. China.
1] Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, P. R. China [2] Collaborative Innovation Center of Quantum Matter, Beijing 100084, P. R. China.
Sci Rep. 2014 Jan 16;4:3727. doi: 10.1038/srep03727.
We report a giant electric-field control of magnetization (M) as well as magnetic anisotropy in a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) structure at room temperature, in which a maximum relative magnetization change (ΔM/M) up to 83% with a 90° rotation of the easy axis under electric fields were observed by different magnetic measurement systems with in-situ electric fields. The mechanism for this giant magnetoelectric (ME) coupling can be understood as the combination of the ultra-high value of anisotropic in-plane piezoelectric coefficients of (011)-cut PMN-PT due to ferroelectric polarization reorientation and the perfect soft ferromagnetism without magnetocrystalline anisotropy of CoFeB film. Besides the giant electric-field control of magnetization and magnetic anisotropy, this work has also demonstrated the feasibility of reversible and deterministic magnetization reversal controlled by pulsed electric fields with the assistance of a weak magnetic field, which is important for realizing strain-mediated magnetoelectric random access memories.
我们报道了在室温下,Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT)结构中,电场对磁化强度(M)以及磁各向异性的巨大控制作用。通过不同的带有原位电场的磁测量系统,观察到在电场作用下,易轴发生90°旋转时,相对磁化强度变化最大值(ΔM/M)可达83%。这种巨大的磁电(ME)耦合机制可以理解为:由于铁电极化重新取向,(011)切割的PMN-PT具有超高的面内各向异性压电系数,以及CoFeB薄膜没有磁晶各向异性的完美软铁磁性。除了电场对磁化强度和磁各向异性的巨大控制作用外,这项工作还证明了在弱磁场辅助下,通过脉冲电场实现可逆和确定性磁化翻转的可行性,这对于实现应变介导的磁电随机存取存储器具有重要意义。