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模拟硅晶尖端的结构发展与能量耗散

Structural development and energy dissipation in simulated silicon apices.

机构信息

School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom.

Department of Physics, King's College London, The Strand, London WC2R 2LS, United Kingdom.

出版信息

Beilstein J Nanotechnol. 2013 Dec 20;4:941-8. doi: 10.3762/bjnano.4.106.

Abstract

In this paper we examine the stability of silicon tip apices by using density functional theory (DFT) calculations. We find that some tip structures - modelled as small, simple clusters - show variations in stability during manipulation dependent on their orientation with respect to the sample surface. Moreover, we observe that unstable structures can be revealed by a characteristic hysteretic behaviour present in the F(z) curves that were calculated with DFT, which corresponds to a tip-induced dissipation of hundreds of millielectronvolts resulting from reversible structural deformations. Additionally, in order to model the structural evolution of the tip apex within a low temperature NC-AFM experiment, we simulated a repeated tip-surface indentation until the tip structure converged to a stable termination and the characteristic hysteretic behaviour was no longer observed. Our calculations suggest that varying just a single rotational degree of freedom can have as measurable an impact on the tip-surface interaction as a completely different tip structure.

摘要

在本文中,我们通过使用密度泛函理论(DFT)计算来研究硅尖端的稳定性。我们发现,某些尖端结构(建模为小而简单的簇)在操作过程中表现出与样品表面的取向有关的稳定性变化。此外,我们观察到不稳定的结构可以通过 DFT 计算得出的 F(z)曲线中存在的特征滞后行为来揭示,这对应于由于可逆结构变形而导致的几百毫电子伏特的尖端诱导耗散。此外,为了在低温 NC-AFM 实验中模拟尖端顶点的结构演化,我们模拟了重复的尖端-表面压痕,直到尖端结构收敛到稳定的终止状态并且不再观察到特征滞后行为。我们的计算表明,仅改变一个旋转自由度就可以对尖端-表面相互作用产生与完全不同的尖端结构相同的可测量影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c5d/3896295/51d4b2ced9f1/Beilstein_J_Nanotechnol-04-941-g002.jpg

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