Zhao Caibin, Ge Hongguang, Yin Shiwei, Wang Wenliang
Key Laboratory for Macromolecular Science of Shaanxi Province, School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi'an, Shaanxi, 710062, China.
J Mol Model. 2014 Apr;20(4):2158. doi: 10.1007/s00894-014-2158-z. Epub 2014 Mar 16.
Exploring and synthesizing new simple n-channel organic semiconductor materials with large electron mobility and high air stability have remained a major challenge and hot issue in the field of organic electronics. In the current work, the electron transport properties of four novel nitrogen-rich pentacene derivatives (PBD1, PBD2, PBD3, and PBD4) with two cyano groups as potential n-channel OFET materials have been investigated at the molecular and crystal levels by means of density functional theory (DFT) calculations coupled with the prediction of crystal structures and the incoherent charge-hopping model. Calculations reveal that the studied compounds, which possess low-lying frontier molecular energy levels, large ionization potentials and electron affinities, are very stable exposed to air. Based on predicted crystal structures, the average electron mobility at room temperature (T = 300 K) for PBD1, PBD2, PBD3, and PBD4 is predicted to be as high as 0.950, 0.558, 0.518, and 1.052 cm²·V⁻¹·s⁻¹, which indicate that these four compounds are more than likely to be promising candidates as n-type OFET materials under favorable device conditions. However, this claim needs experimental verification. In addition, the angular-dependent simulation for electron mobility shows that the electron transport is remarkably anisotropic in these molecular crystals and the maximum μ(e) appears along the crystal axis direction since molecules along this direction exhibit the close face-to-face stacking arrangement with short interplanar distances (~3.6-4.0 Å), which induces large electronic couplings.
探索并合成具有大电子迁移率和高空气稳定性的新型简单n沟道有机半导体材料一直是有机电子领域的一项重大挑战和热点问题。在当前工作中,通过密度泛函理论(DFT)计算,结合晶体结构预测和非相干电荷跳跃模型,在分子和晶体水平上研究了四种新型含氮并五苯衍生物(PBD1、PBD2、PBD3和PBD4)作为潜在n沟道有机场效应晶体管(OFET)材料的电子传输特性。计算结果表明,所研究的化合物具有低的前沿分子能级、大的电离势和电子亲和势,在空气中非常稳定。基于预测的晶体结构,PBD1、PBD2、PBD3和PBD4在室温(T = 300 K)下的平均电子迁移率预计分别高达0.950、0.558、0.518和1.052 cm²·V⁻¹·s⁻¹,这表明在有利的器件条件下,这四种化合物很有可能成为有前途的n型OFET材料候选物。然而,这一说法需要实验验证。此外,电子迁移率的角度依赖性模拟表明,在这些分子晶体中电子传输具有明显的各向异性,并且最大μ(e)出现在晶体轴方向,因为沿该方向的分子呈现出紧密的面对面堆积排列,平面间距较短(约3.6 - 4.0 Å),这导致了较大的电子耦合。