Bai Zhiming, Chen Xiang, Yan Xiaoqin, Zheng Xin, Kang Zhuo, Zhang Yue
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
Phys Chem Chem Phys. 2014 May 28;16(20):9525-9. doi: 10.1039/c4cp00892h.
A self-powered Schottky-type ultraviolet photodetector with Al-Pt interdigitated electrodes has been fabricated based on selectively grown ZnO nanowire arrays. At zero bias, the fabricated photodetector exhibited high sensitivity and excellent selectivity to UV light illumination with a fast response time of 81 ms. By tuning the Schottky barrier height through the thermally induced variation of the interface chemisorbed oxygen, an ultrahigh sensitivity of 3.1 × 10(4) was achieved at 340 K without an external power source, which was 82% higher than that obtained at room temperature. According to the thermionic emission-diffusion theory and the solar cell theory, the changes in the photocurrent of the photodetector at zero bias with various system temperatures were calculated, which agreed well with the experimental data. This work demonstrates a promising approach to modulating the performance of a self-powered photodetector by heating and provides theoretical support for studying the thermal effect on the future photoelectric device.
基于选择性生长的氧化锌纳米线阵列,制备了一种具有铝 - 铂叉指电极的自供电肖特基型紫外光电探测器。在零偏压下,所制备的光电探测器对紫外光照射表现出高灵敏度和优异的选择性,响应时间快至81毫秒。通过热诱导界面化学吸附氧的变化来调节肖特基势垒高度,在340K时无需外部电源即可实现3.1×10(4)的超高灵敏度,比室温下获得的灵敏度高出82%。根据热电子发射 - 扩散理论和太阳能电池理论,计算了零偏压下光电探测器在不同系统温度下光电流的变化,计算结果与实验数据吻合良好。这项工作展示了一种通过加热来调制自供电光电探测器性能的有前景的方法,并为研究热效应在未来光电器件中的作用提供了理论支持。