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拓扑绝缘体的有限温度电导率和磁电导率。

Finite-temperature conductivity and magnetoconductivity of topological insulators.

机构信息

Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China.

出版信息

Phys Rev Lett. 2014 Apr 11;112(14):146601. doi: 10.1103/PhysRevLett.112.146601. Epub 2014 Apr 7.

Abstract

The electronic transport experiments on topological insulators exhibit a dilemma. A negative cusp in magnetoconductivity is widely believed as a quantum transport signature of the topological surface states, which are immune from localization and exhibit the weak antilocalization. However, the measured conductivity drops logarithmically when lowering temperature, showing a typical feature of the weak localization as in ordinary disordered metals. Here, we present a conductivity formula for massless and massive Dirac fermions as a function of magnetic field and temperature, by taking into account the electron-electron interaction and quantum interference simultaneously. The formula reconciles the dilemma by explicitly clarifying that the temperature dependence of the conductivity is dominated by the interaction, while the magnetoconductivity is mainly contributed by the quantum interference. The theory paves the road to quantitatively study the transport in topological insulators, and can be extended to other two-dimensional Dirac-like systems, such as graphene, transition metal dichalcogenides, and silicene.

摘要

拓扑绝缘体的电子输运实验出现了一个困境。电导的负拐通常被认为是拓扑表面态的量子输运特征,拓扑表面态不受局域化影响,表现出弱反局域化。然而,当温度降低时,测量到的电导率呈对数衰减,表现出典型的弱局域化特征,就像普通无序金属一样。在这里,我们通过同时考虑电子-电子相互作用和量子干涉,提出了一个无质量和有质量狄拉克费米子的电导率公式,作为磁场和温度的函数。该公式通过明确说明电导率的温度依赖性主要由相互作用决定,而磁电导率主要由量子干涉决定,从而解决了这个困境。该理论为定量研究拓扑绝缘体中的输运铺平了道路,并且可以扩展到其他二维类似狄拉克的系统,如石墨烯、过渡金属二卤化物和硅烯。

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