Lin Yi-Jun, Liu Wen-Yan, Zhang Yu, Bi Ke, Zhang Tie-Qiang, Feng Yi, Wang Yi-Ding
Guang Pu Xue Yu Guang Pu Fen Xi. 2014 Jan;34(1):20-2.
ZnCuInS/ZnSe/ZnS quantum dots were non-toxic and heavy-metal free semiconductor nanocrystals. In the present paper, ZnCuInS/ZnSe/ZnS core/shell/shell quantum dots were prepared with the particle size of 3.3, 2.7 and 2.3 nm. The photoluminescence of ZnCuInS/ZnSe/ZnS quantum dots with different size were measured, and the wavelength of peak was blue-shifted with decreasing the diameter. The wavelength of absorption peaks and photoluminescence peaks were 510 nm, 611 nm (3.3 nm), 483 nm, 583 nm (2.7 nm) and 447 nm and 545 nm(2.3 nm). The obvious size-dependence of ZnCuInS/ZnSe/ZnS quantum dots was shown. The Stokes shifts of ZnCuInS/ZnSe/ZnS quantum dots were 398 meV (3.3 nm), 436 meV (2.7 nm) and 498 meV (2.3 nm). Such large Stokes shifts indicate that the emission should be ascribed to the defect-related recombination. The temperature-dependent photoluminescence of ZnCuInS/ZnSe/ZnS quantum dots with the particle size of 3.3 nm were measured. The wavelength of peaks was red-shifted with increasing temperature and the intensity of photoluminescence spectra was decreased with increasing temperature. Therefore, the emission was concluded to be the transition from the conduction band to defect state.
ZnCuInS/ZnSe/ZnS量子点是无毒且无重金属的半导体纳米晶体。在本文中,制备了粒径分别为3.3、2.7和2.3纳米的ZnCuInS/ZnSe/ZnS核/壳/壳结构量子点。测量了不同尺寸的ZnCuInS/ZnSe/ZnS量子点的光致发光,其峰值波长随着直径的减小而蓝移。吸收峰和光致发光峰的波长分别为510纳米、611纳米(3.3纳米)、483纳米、583纳米(2.7纳米)以及447纳米和545纳米(2.3纳米)。结果表明ZnCuInS/ZnSe/ZnS量子点具有明显的尺寸依赖性。ZnCuInS/ZnSe/ZnS量子点的斯托克斯位移分别为398毫电子伏特(3.3纳米)、436毫电子伏特(2.7纳米)和498毫电子伏特(2.3纳米)。如此大的斯托克斯位移表明发射应归因于与缺陷相关的复合。测量了粒径为3.3纳米的ZnCuInS/ZnSe/ZnS量子点的温度依赖光致发光。峰值波长随着温度升高而红移,并且光致发光光谱的强度随着温度升高而降低。因此,得出发射是从导带向缺陷态的跃迁的结论。