Cambridge Graphene Centre, University of Cambridge , Cambridge CB3 0FA, U.K.
ACS Nano. 2014 Jul 22;8(7):7432-41. doi: 10.1021/nn502676g. Epub 2014 Jul 10.
We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7 eV, as directly monitored by in situ Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level.
我们研究了掺杂作用下缺陷石墨烯拉曼光谱的演变。通过原位霍尔效应测量，我们发现聚合物电解质门控可以将费米能级向上移动至 0.7eV。对于给定数量的缺陷，我们发现 D 和 D'峰的强度随着掺杂的增加而减小。我们将其归因于掺杂依赖性的电子-电子散射强度增加，导致光激发电子和空穴的总散射率增加。我们提出了一个适用于任何掺杂水平的 D 峰强度与缺陷之间的一般关系。
