Minami Sojiro, Ide Marina, Hirano Koji, Satoh Tetsuya, Sakurai Tsuneaki, Kato Kenichi, Takata Masaki, Seki Shu, Miura Masahiro
Department of Applied Chemistry, Faculty of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.
Phys Chem Chem Phys. 2014 Sep 21;16(35):18805-12. doi: 10.1039/c4cp03002h.
Synthesis of the title benzo[1,2-b:4,5-b']dithiophenes was achieved using 2-ethylhexyl 3,7-dihydroxybenzo[1,2-b:4,5-b']dithiophene-2,6-dicarboxylate as the common starting material. The effect of the introduction of phenyl and styryl groups as well as thieno-annulation to the benzo[1,2-b:4,5-b']dithiophene core on π-conjugation was estimated by means of absorption and emission spectrometry and cyclic voltammetry. The phase behaviours of the compounds were also observed by differential scanning calorimetry and the dithieno-annulated higher homologs were found to show a solid-solid (crystalline-crystalline) phase transition. Then, intrinsic charge carrier mobilities in the π-systems were measured by the flash-photolysis time-resolved microwave conductivity (FP-TRMC) method and the values were in the range of 0.04-0.17 cm(2) V(-1) s(-1). Remarkably, the thieno-annulated and phenyl-capped derivative showed a temperature/phase-dependent hole mobility profile with 3-fold increment in the second crystalline phase above 100 °C.
以2-乙基己基3,7-二羟基苯并[1,2-b:4,5-b']二噻吩-2,6-二羧酸酯为通用起始原料,实现了标题化合物苯并[1,2-b:4,5-b']二噻吩的合成。通过吸收光谱、发射光谱和循环伏安法评估了在苯并[1,2-b:4,5-b']二噻吩核上引入苯基和苯乙烯基以及噻吩稠合对π共轭的影响。还通过差示扫描量热法观察了这些化合物的相行为,发现噻吩稠合的高级同系物表现出固-固(晶-晶)相变。然后,通过闪光光解时间分辨微波电导率(FP-TRMC)方法测量了π体系中的本征电荷载流子迁移率,其值在0.04 - 0.17 cm² V⁻¹ s⁻¹范围内。值得注意的是,噻吩稠合且带有苯基封端的衍生物在100°C以上的第二晶相中显示出温度/相依赖的空穴迁移率分布,迁移率增加了3倍。