在锗衬底上单片生长的砷化铟/砷化镓量子点超发光二极管。

InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.

作者信息

Jiang Qi, Tang Mingchu, Chen Siming, Wu Jiang, Seeds Alwyn, Liu Huiyun

出版信息

Opt Express. 2014 Sep 22;22(19):23242-8. doi: 10.1364/OE.22.023242.

DOI:10.1364/OE.22.023242

Abstract

We report the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on a Ge substrate by molecular beam epitaxy. The QD SLD exhibits a 3 dB emission bandwidth of ~60 nm centered at 1252 nm with output power of 27 mW at room temperature. The 3 dB bandwidth is very stable over the temperature range from 20 °C to 100 °C, which highlights the potential for integration with high performance ICs.

摘要

我们报道了首个通过分子束外延在Ge衬底上单片生长的InAs/GaAs量子点（QD）超发光二极管（SLD）。该量子点超发光二极管在室温下呈现出中心波长为1252 nm、3 dB发射带宽约为60 nm且输出功率为27 mW的特性。在20°C至100°C的温度范围内，3 dB带宽非常稳定，这突出了其与高性能集成电路集成的潜力。