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具有滞后特性突触组件的模拟神经网络硬件的反向传播操作。

Back-propagation operation for analog neural network hardware with synapse components having hysteresis characteristics.

作者信息

Ueda Michihito, Nishitani Yu, Kaneko Yukihiro, Omote Atsushi

机构信息

Advanced Research Division, Panasonic Corporation, Soraku, Kyoto, Japan.

出版信息

PLoS One. 2014 Nov 13;9(11):e112659. doi: 10.1371/journal.pone.0112659. eCollection 2014.

Abstract

To realize an analog artificial neural network hardware, the circuit element for synapse function is important because the number of synapse elements is much larger than that of neuron elements. One of the candidates for this synapse element is a ferroelectric memristor. This device functions as a voltage controllable variable resistor, which can be applied to a synapse weight. However, its conductance shows hysteresis characteristics and dispersion to the input voltage. Therefore, the conductance values vary according to the history of the height and the width of the applied pulse voltage. Due to the difficulty of controlling the accurate conductance, it is not easy to apply the back-propagation learning algorithm to the neural network hardware having memristor synapses. To solve this problem, we proposed and simulated a learning operation procedure as follows. Employing a weight perturbation technique, we derived the error change. When the error reduced, the next pulse voltage was updated according to the back-propagation learning algorithm. If the error increased the amplitude of the next voltage pulse was set in such way as to cause similar memristor conductance but in the opposite voltage scanning direction. By this operation, we could eliminate the hysteresis and confirmed that the simulation of the learning operation converged. We also adopted conductance dispersion numerically in the simulation. We examined the probability that the error decreased to a designated value within a predetermined loop number. The ferroelectric has the characteristics that the magnitude of polarization does not become smaller when voltages having the same polarity are applied. These characteristics greatly improved the probability even if the learning rate was small, if the magnitude of the dispersion is adequate. Because the dispersion of analog circuit elements is inevitable, this learning operation procedure is useful for analog neural network hardware.

摘要

为了实现模拟人工神经网络硬件,用于突触功能的电路元件很重要,因为突触元件的数量远多于神经元元件。这种突触元件的候选之一是铁电忆阻器。该器件用作电压可控可变电阻器,可应用于突触权重。然而,其电导表现出滞后特性以及对输入电压的分散性。因此,电导值会根据施加脉冲电压的高度和宽度的历史而变化。由于难以控制精确的电导,将反向传播学习算法应用于具有忆阻器突触的神经网络硬件并不容易。为了解决这个问题,我们提出并模拟了如下学习操作过程。采用权重扰动技术,我们推导出误差变化。当误差减小时,根据反向传播学习算法更新下一个脉冲电压。如果误差增大,则将下一个电压脉冲的幅度设置为在相反电压扫描方向上引起类似的忆阻器电导。通过这种操作,我们可以消除滞后现象,并确认学习操作的模拟收敛。我们还在模拟中数值地采用了电导分散性。我们研究了在预定循环次数内误差降低到指定值的概率。铁电体具有当施加相同极性的电压时极化强度不会变小的特性。即使学习率很小,但如果分散程度足够,这些特性会大大提高概率。因为模拟电路元件的分散是不可避免的,所以这种学习操作过程对模拟神经网络硬件很有用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c473/4231062/27e8a3fd0343/pone.0112659.g001.jpg

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