Mohite V S, Mahadik M A, Kumbhar S S, Hunge Y M, Kim J H, Moholkar A V, Rajpure K Y, Bhosale C H
Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India.
Department of Materials Science and Engineering, Chonnam National University, 300 Yong bong-Dong, Puk-Gu, Gwangju 500-757, South Korea.
J Photochem Photobiol B. 2015 Jan;142:204-11. doi: 10.1016/j.jphotobiol.2014.12.004. Epub 2014 Dec 10.
Highly transparent pure and Au doped TiO2 thin films are successfully deposited by using simple chemical spray pyrolysis technique. The effect of Au doping onto the structural and physicochemical properties has been investigated. The PEC study shows that, both short circuit current (Isc) and open circuit voltage (Voc) are (Isc=1.81mA and Voc=890mV) relatively higher at 3at.% Au doping percentage. XRD study shows that the films are nanocrystalline in nature with tetragonal crystal structure. FESEM images show that the film surface covered with a smooth, uniform, compact and rice shaped nanoparticles. The Au doped thin films exhibit indirect band gap, decreases from 3.23 to 3.09eV with increase in Au doping. The chemical composition and valence states of pure and Au doped TiO2 films are studied by using X-ray photoelectron spectroscopy. The photocatalytic degradation effect is 49% higher in case 3at.% Au doped TiO2 than the pure TiO2 thin film photoelectrodes in the degradation of benzoic acid. It is revealed that Au doped TiO2 can be reused for five cycles of experiments without a requirement of post-treatment while the degradation efficiency was retained.
采用简单的化学喷雾热解技术成功制备了高透明的纯TiO₂薄膜和掺金TiO₂薄膜。研究了金掺杂对其结构和物理化学性质的影响。光电化学研究表明，在金掺杂百分比为3at.%时，短路电流（Isc）和开路电压（Voc）相对较高（Isc = 1.81mA，Voc = 890mV）。X射线衍射研究表明，薄膜本质上是具有四方晶体结构的纳米晶体。场发射扫描电子显微镜图像表明，薄膜表面覆盖着光滑、均匀、致密的米粒状纳米颗粒。掺金薄膜呈现间接带隙，随着金掺杂量的增加，带隙从3.23eV降至3.09eV。利用X射线光电子能谱研究了纯TiO₂薄膜和掺金TiO₂薄膜的化学成分和价态。在苯甲酸降解实验中，3at.%掺金TiO₂薄膜的光催化降解效果比纯TiO₂薄膜光电极高49%。结果表明，掺金TiO₂薄膜无需后处理即可重复使用五个实验周期，且降解效率得以保持。
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