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钨作为碳汇在合成无双层/多层的大区域均匀单层石墨烯中的应用。

Application of tungsten as a carbon sink for synthesis of large-domain uniform monolayer graphene free of bilayers/multilayers.

作者信息

Fang Wenjing, Hsu Allen, Shin Yong Cheol, Liao Albert, Huang Shengxi, Song Yi, Ling Xi, Dresselhaus Mildred S, Palacios Tomas, Kong Jing

机构信息

Department of Electrical Engineering and Computer Sciences, Cambridge, Massachusetts 02139, USA.

出版信息

Nanoscale. 2015 Mar 21;7(11):4929-34. doi: 10.1039/c4nr07418a.

Abstract

We have found that tungsten (W) foils can be used for controlling the carbon diffusion within copper (Cu) enclosures to synthesize large-domain bi-/multi-layer-free monolayer graphene via chemical vapor deposition. We have observed that bi-/multi-layer graphene that nucleate underneath the monolayer graphene can be selectively removed by a W foil placed inside of the Cu enclosure. Both X-ray photoelectron spectroscopy and X-ray diffraction reveal the formation of tungsten sub-carbide (W2C), suggesting the role of the W foil as a carbon sink that alters the carbon concentration inside of the enclosure. Consequently, the bi-/multi-layers appear to dissolve. Utilizing this selective removal process, we were able to demonstrate large-domain (>200 μm) monolayer graphene that is free of any bi-/multi-layers by using Cu double enclosures.

摘要

我们发现,钨(W)箔可用于控制铜(Cu)外壳内的碳扩散,以通过化学气相沉积合成大尺寸的双层/多层无单层石墨烯。我们观察到,在单层石墨烯下方成核的双层/多层石墨烯可以通过放置在铜外壳内部的钨箔选择性地去除。X射线光电子能谱和X射线衍射都揭示了碳化钨(W2C)的形成,这表明钨箔作为碳汇改变了外壳内的碳浓度。因此,双层/多层似乎溶解了。利用这种选择性去除过程,我们能够通过使用铜双层外壳展示出无任何双层/多层的大尺寸(>200μm)单层石墨烯。

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