Liu Jun, Wu Xinkai, Shi Xindong, Wang Jing, Min Zhiyuan, Wang Yang, Yang Meijun, He Gufeng
National Engineering Lab for TFT-LCD Materials and Technologies, and Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
ACS Appl Mater Interfaces. 2015 Apr 1;7(12):6438-43. doi: 10.1021/am506300c. Epub 2015 Mar 17.
A highly efficient and stable electron injection layer (EIL) for inverted organic light-emitting diodes (OLEDs) is developed. A 1 nm-thick Al is deposited between indium tin oxide cathode and commonly used Cs2CO3 EIL, which can significantly improve the stability. The Al may react with evaporated Cs2CO3 and form a much stabler Al-O-Cs complex, avoiding Cs oxidization by air according to X-ray photoemission spectroscopy measurement. When the Al is evaporated after Cs2CO3 layer, although such a Al-O-Cs complex also forms, the inferior electron injection at Al/4,7-diphenyl-1,10-phenanthroline interface leads to a joule heat-induced resistance that adversely affects the air stability of the device. It is expected that the developed Al/Cs2CO3 EIL promotes high efficiency and stable active-matrix OLEDs based on n-type thin film transistor.
开发了一种用于倒置有机发光二极管(OLED)的高效稳定电子注入层(EIL)。在氧化铟锡阴极和常用的碳酸铯EIL之间沉积1纳米厚的铝,这可以显著提高稳定性。根据X射线光电子能谱测量,铝可能与蒸发的碳酸铯反应形成更稳定的Al-O-Cs络合物,避免铯被空气氧化。当在碳酸铯层之后蒸发铝时,尽管也会形成这样的Al-O-Cs络合物,但在Al/4,7-二苯基-1,10-菲咯啉界面处较差的电子注入会导致焦耳热诱导电阻,这对器件的空气稳定性产生不利影响。预计所开发的Al/Cs2CO3 EIL将促进基于n型薄膜晶体管的高效稳定有源矩阵OLED的发展。