Department of Physics, McGill University, 3600 rue University, Montreal, Quebec H3A2T8, Canada.
Nano Lett. 2015 Apr 8;15(4):2324-8. doi: 10.1021/nl504468a. Epub 2015 Mar 17.
We present theoretical and experimental studies of the effect of the density of states of a quantum dot (QD) on the rate of single-electron tunneling that can be directly measured by electrostatic force microscopy (e-EFM) experiments. In e-EFM, the motion of a biased atomic force microscope cantilever tip modulates the charge state of a QD in the Coulomb blockade regime. The charge dynamics of the dot, which is detected through its back-action on the capacitavely coupled cantilever, depends on the tunneling rate of the QD to a back-electrode. The density of states of the QD can therefore be measured through its effect on the energy dependence of tunneling rate. We present experimental data on individual 5 nm colloidal gold nanoparticles that exhibit a near continuous density of state at 77 K. In contrast, our analysis of already published data on self-assembled InAs QDs at 4 K clearly reveals discrete degenerate energy levels.
我们提出了量子点(QD)态密度对单电子隧穿速率的影响的理论和实验研究,这种隧穿速率可以通过静电力显微镜(e-EFM)实验直接测量。在 e-EFM 中,偏置原子力显微镜悬臂尖端的运动在库仑阻塞(Coulomb blockade)状态下调制 QD 的电荷状态。通过其对电容耦合悬臂的反作用来检测的点的电荷动力学,取决于 QD 到背电极的隧穿速率。因此,通过其对隧穿速率的能量依赖性的影响,可以测量 QD 的态密度。我们提出了单个 5nm 胶体金纳米粒子的实验数据,该数据在 77K 时表现出近乎连续的态密度。相比之下,我们对已发表的在 4K 时自组装 InAs QD 的数据分析清楚地揭示了离散简并能级。