固体中亚纳米原子缺陷的正电子学作为一种高信息量的结构表征工具。
Positronics of subnanometer atomistic imperfections in solids as a high-informative structure characterization tool.
作者信息
Shpotyuk Oleh, Filipecki Jacek, Ingram Adam, Golovchak Roman, Vakiv Mykola, Klym Halyna, Balitska Valentyna, Shpotyuk Mykhaylo, Kozdras Andrzej
机构信息
Lviv Institute of Materials of SRC "Carat", Stryjska str., 202, Lviv, 79031 Ukraine ; Jan Dlugosz University, Al. Armii Krajowej, 13/15, Czestochowa, 42201 Poland.
Jan Dlugosz University, Al. Armii Krajowej, 13/15, Czestochowa, 42201 Poland.
出版信息
Nanoscale Res Lett. 2015 Feb 19;10:77. doi: 10.1186/s11671-015-0764-z. eCollection 2015.
Methodological possibilities of positron annihilation lifetime (PAL) spectroscopy applied to characterize different types of nanomaterials treated within three-term fitting procedure are critically reconsidered. In contrast to conventional three-term analysis based on admixed positron- and positronium-trapping modes, the process of nanostructurization is considered as substitutional positron-positronium trapping within the same host matrix. Developed formalism allows estimate interfacial void volumes responsible for positron trapping and characteristic bulk positron lifetimes in nanoparticle-affected inhomogeneous media. This algorithm was well justified at the example of thermally induced nanostructurization occurring in 80GeSe2-20Ga2Se3 glass.
重新审视了正电子湮没寿命（PAL）光谱学在表征采用三项拟合程序处理的不同类型纳米材料时的方法学可能性。与基于混合正电子和正电子素俘获模式的传统三项分析不同，纳米结构化过程被视为在同一主体基质内的替代正电子 - 正电子素俘获。所发展的形式体系能够估计在纳米颗粒影响的非均匀介质中负责正电子俘获的界面空隙体积以及特征性的体正电子寿命。以80GeSe2 - 20Ga2Se3玻璃中发生的热诱导纳米结构化为例，该算法得到了充分验证。
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