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通过离子交换反应生长的共形硫化亚铜包覆氧化亚铜纳米结构及其光电化学性质。

Conformal Cu2S-coated Cu2O nanostructures grown by ion exchange reaction and their photoelectrochemical properties.

作者信息

Minguez-Bacho Ignacio, Courté Marc, Fan Hong Jin, Fichou Denis

机构信息

School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.

出版信息

Nanotechnology. 2015 May 8;26(18):185401. doi: 10.1088/0957-4484/26/18/185401. Epub 2015 Apr 13.

Abstract

Cuprous oxide Cu2O is a promising p-type semiconductor for photoelectrochemical (PEC) solar hydrogen generation because it has a suitable bandgap (Eg = 2.0-2.2 eV) and a band alignment adapted to water reduction. In addition, metallic Cu is earth-abundant thus making Cu2O a low-cost material. However, the reduction potential of Cu2O into metallic Cu (0.47 V versus RHE) is lower than that of water which induces a severe instability under irradiation in a PEC cell. Therefore, our recent efforts focused on the growth of a protective overlayer on top of Cu2O in order to stabilize Cu2O when used as a photocathode in an aqueous electrolyte. Among potential protective materials cuprous sulphide Cu2S is another p-type semiconductor with a 1.2 eV bandgap and an appropriate energy level alignment with Cu2O that would allow electrons flowing to the interface. We present here an original and simple method aimed at protecting a compact layer (CL) or nanowires (NWs) of Cu2O with a Cu2S coating. Our method is based on the ions exchange reaction (IER) of O(2-) into S(2-) at the surface of Cu2O itself in a solution-containing Na2S as the sulphur source. The local surface IER implies the formation of a conformal and uniform coating independently on the starting Cu2O morphology, CLs or NWs. As expected, coating Cu2O photocathodes by a conformal Cu2S layer improves their stability and PEC performances.

摘要

氧化亚铜(Cu2O)是一种很有前景的用于光电化学(PEC)太阳能制氢的p型半导体,因为它具有合适的带隙(Eg = 2.0 - 2.2 eV)以及适合水还原的能带排列。此外,金属铜在地壳中储量丰富,因此使得Cu2O成为一种低成本材料。然而,Cu2O还原为金属铜的还原电位(相对于可逆氢电极(RHE)为0.47 V)低于水的还原电位,这导致在PEC电池中光照下其稳定性较差。因此,我们最近的工作重点是在Cu2O顶部生长一层保护覆盖层,以便在用作水电解质中的光阴极时稳定Cu2O。在潜在的保护材料中,硫化亚铜(Cu2S)是另一种p型半导体,其带隙为1.2 eV,与Cu2O具有合适的能级排列,这将允许电子流向界面。我们在此展示一种新颖且简单旨在用Cu2S涂层保护Cu2O致密层(CL)或纳米线(NWs)的方法。我们的方法基于在以Na2S作为硫源的溶液中,在Cu2O自身表面O(2-)到S(2-)的离子交换反应(IER)。局部表面IER意味着无论起始Cu2O的形态是CLs还是NWs,都会形成保形且均匀的涂层。正如预期的那样,用保形的Cu2S层涂覆Cu2O光阴极可提高其稳定性和PEC性能。

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