Yu Shihui, Li Lingxia, Zhang Weifeng, Sun Zheng, Dong Helei
School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, P. R. China.
Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475004, P. R. China.
Sci Rep. 2015 May 11;5:10173. doi: 10.1038/srep10173.
The dielectric properties and tunability of multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 (PZT/BZN) layers (PPBLs) fabricated by pulsed laser deposition on Pt/TiO2/SiO2/Si substrate have been investigated. Dielectric measurements indicate that the PZT/BZN bilayer thin films exhibit medium dielectric constant of about 490, low loss tangent of 0.017, and superior tunable dielectric properties (tunability=49.7% at 500 kV/cm) at a PZT/BZN thickness ratio of 3, while the largest figure of merit is obtained as 51.8. The thickness effect is discussed with a series connection model of bilayer capacitors, and the calculated dielectric constant and loss tangent are obtained. Furthermore, five kinds of thin-film samples comprising single bilayers, two, three, four and five PPBLs were also elaborated with the final same thickness. The four PPBLs show the largest dielectric constant of ~538 and tunability of 53.3% at a maximum applied bias field of 500 kV/cm and the lowest loss tangent of ~0.015, while the largest figure of merit is 65.6. The results indicate that four PPBLs are excellent candidates for applications of tunable devices.
研究了通过脉冲激光沉积在Pt/TiO2/SiO2/Si衬底上制备的具有PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7(PZT/BZN)组成层的多层薄膜(PPBLs)的介电性能和可调性。介电测量表明,PZT/BZN双层薄膜在PZT/BZN厚度比为3时表现出约490的中等介电常数、0.017的低损耗正切和优异的可调介电性能(在500 kV/cm下可调性为49.7%),而最大品质因数为51.8。用双层电容器的串联模型讨论了厚度效应,并得到了计算的介电常数和损耗正切。此外,还制备了五种薄膜样品,包括单层、两层、三层、四层和五层PPBLs,最终厚度相同。四层PPBLs在最大施加偏置场为500 kV/cm时显示出约538的最大介电常数和53.3%的可调性,以及约0.015的最低损耗正切,而最大品质因数为65.6。结果表明,四层PPBLs是可调器件应用的优秀候选材料。