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一种CMOS-MEMS湿度传感器的制造与表征

Fabrication and Characterization of a CMOS-MEMS Humidity Sensor.

作者信息

Dennis John-Ojur, Ahmed Abdelaziz-Yousif, Khir Mohd-Haris

机构信息

Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, Perak Darul Ridzuan 32610, Malaysia.

Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, Perak Darul Ridzuan 32610, Malaysia.

出版信息

Sensors (Basel). 2015 Jul 10;15(7):16674-87. doi: 10.3390/s150716674.

Abstract

This paper reports on the fabrication and characterization of a Complementary Metal Oxide Semiconductor-Microelectromechanical System (CMOS-MEMS) device with embedded microheater operated at relatively elevated temperatures (40 °C to 80 °C) for the purpose of relative humidity measurement. The sensing principle is based on the change in amplitude of the device due to adsorption or desorption of humidity on the active material layer of titanium dioxide (TiO2) nanoparticles deposited on the moving plate, which results in changes in the mass of the device. The sensor has been designed and fabricated through a standard 0.35 µm CMOS process technology and post-CMOS micromachining technique has been successfully implemented to release the MEMS structures. The sensor is operated in the dynamic mode using electrothermal actuation and the output signal measured using a piezoresistive (PZR) sensor connected in a Wheatstone bridge circuit. The output voltage of the humidity sensor increases from 0.585 mV to 30.580 mV as the humidity increases from 35% RH to 95% RH. The output voltage is found to be linear from 0.585 mV to 3.250 mV as the humidity increased from 35% RH to 60% RH, with sensitivity of 0.107 mV/% RH; and again linear from 3.250 mV to 30.580 mV as the humidity level increases from 60% RH to 95% RH, with higher sensitivity of 0.781 mV/% RH. On the other hand, the sensitivity of the humidity sensor increases linearly from 0.102 mV/% RH to 0.501 mV/% RH with increase in the temperature from 40 °C to 80 °C and a maximum hysteresis of 0.87% RH is found at a relative humidity of 80%. The sensitivity is also frequency dependent, increasing from 0.500 mV/% RH at 2 Hz to reach a maximum value of 1.634 mV/% RH at a frequency of 12 Hz, then decreasing to 1.110 mV/% RH at a frequency of 20 Hz. Finally, the CMOS-MEMS humidity sensor showed comparable response, recovery, and repeatability of measurements in three cycles as compared to a standard sensor that directly measures humidity in % RH.

摘要

本文报道了一种用于相对湿度测量的互补金属氧化物半导体-微机电系统(CMOS-MEMS)器件的制造与特性,该器件带有嵌入式微加热器,可在相对较高的温度(40℃至80℃)下工作。其传感原理基于湿度在沉积于移动板上的二氧化钛(TiO₂)纳米颗粒活性材料层上的吸附或解吸导致器件振幅变化,进而引起器件质量变化。该传感器通过标准的0.35μm CMOS工艺技术进行设计和制造,并成功采用CMOS后微加工技术来释放MEMS结构。传感器采用电热驱动在动态模式下工作,输出信号通过连接在惠斯通电桥电路中的压阻(PZR)传感器进行测量。随着湿度从35%RH增加到95%RH,湿度传感器的输出电压从0.585mV增加到30.580mV。当湿度从35%RH增加到60%RH时,输出电压在0.585mV至3.250mV之间呈线性,灵敏度为0.107mV/%RH;当湿度水平从60%RH增加到95%RH时,输出电压再次在3.250mV至30.580mV之间呈线性,灵敏度更高,为0.781mV/%RH。另一方面,随着温度从40℃升高到80℃,湿度传感器的灵敏度从0.102mV/%RH线性增加到0.501mV/%RH,在相对湿度为80%时发现最大滞后为0.87%RH。灵敏度还与频率有关,从2Hz时的0.500mV/%RH增加到12Hz时达到最大值1.634mV/%RH,然后在20Hz时降至1.110mV/%RH。最后,与直接测量相对湿度百分比的标准传感器相比,CMOS-MEMS湿度传感器在三个周期内显示出可比的响应、恢复和测量重复性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/433b/4541900/5dd9f178e011/sensors-15-16674-g001.jpg

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