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将 PTB7:PC71BM 倒置有机太阳能电池的高功率转换效率与纳米结构相关联。

Correlating high power conversion efficiency of PTB7:PC71BM inverted organic solar cells with nanoscale structures.

机构信息

Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN 37996, USA.

出版信息

Nanoscale. 2015 Oct 14;7(38):15576-83. doi: 10.1039/c5nr03332b. Epub 2015 Jul 29.

Abstract

Advances in material design and device engineering led to inverted organic solar cells (i-OSCs) with superior power conversion efficiencies (PCEs) compared to their "conventional" counterparts, in addition to the well-known better ambient stability. Here, we report an in-depth morphology study of the i-OSC active and cathode modifying layers, employing a model system with a well-established bulk-heterojunction, PTB7:PC71BM as the active layer and poly-[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) as the cathode surface modifying layer. We have also identified the role of a processing additive, 1,8-diiodooctane (DIO), used in the spin-casting of the active layer to increase PCE. Using various characterization techniques, we demonstrate that the high PCEs of i-OSCs are due to the diffusion of electron-accepting PC71BM into the PFN layer, resulting in improved electron transport. The diffusion occurs when residual solvent molecules in the spun-cast film act as a plasticizer. Addition of DIO to the casting solution results in more PC71BM diffusion and therefore more efficient electron transport. This work provides important insight and guidance to further enhancement of i-OSC performance by materials and interface engineering.

摘要

材料设计和器件工程的进步使得倒置有机太阳能电池(i-OSC)与传统结构相比具有更高的功率转换效率(PCE),此外还具有众所周知的更好的环境稳定性。在这里,我们报告了对 i-OSC 活性层和阴极修饰层的深入形态研究,使用了具有成熟体异质结的模型系统,以 PTB7:PC71BM 作为活性层,聚[[9,9-双(3'-(N,N-二甲基氨基)丙基)-2,7-芴]--alt-2,7-(9,9-二辛基芴)](PFN)作为阴极表面修饰层。我们还确定了加工添加剂 1,8-二碘辛烷(DIO)的作用,它用于提高 PCE 的活性层旋涂。使用各种表征技术,我们证明了 i-OSC 的高 PCE 是由于电子受体 PC71BM 扩散到 PFN 层中,从而改善了电子传输。当旋涂薄膜中的残留溶剂分子充当增塑剂时,会发生扩散。将 DIO 添加到铸造溶液中会导致更多的 PC71BM 扩散,从而实现更有效的电子传输。这项工作为通过材料和界面工程进一步提高 i-OSC 性能提供了重要的见解和指导。

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