Dufferwiel S, Schwarz S, Withers F, Trichet A A P, Li F, Sich M, Del Pozo-Zamudio O, Clark C, Nalitov A, Solnyshkov D D, Malpuech G, Novoselov K S, Smith J M, Skolnick M S, Krizhanovskii D N, Tartakovskii A I
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK.
School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK.
Nat Commun. 2015 Oct 8;6:8579. doi: 10.1038/ncomms9579.
Layered materials can be assembled vertically to fabricate a new class of van der Waals heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for control of light-matter coupling. Here, we incorporate molybdenum diselenide/hexagonal boron nitride (MoSe2/hBN) quantum wells in a tunable optical microcavity. Part-light-part-matter polariton eigenstates are observed as a result of the strong coupling between MoSe2 excitons and cavity photons, evidenced from a clear anticrossing between the neutral exciton and the cavity modes with a splitting of 20 meV for a single MoSe2 monolayer, enhanced to 29 meV in MoSe2/hBN/MoSe2 double-quantum wells. The splitting at resonance provides an estimate of the exciton radiative lifetime of 0.4 ps. Our results pave the way for room-temperature polaritonic devices based on multiple-quantum-well van der Waals heterostructures, where polariton condensation and electrical polariton injection through the incorporation of graphene contacts may be realized.
层状材料可以垂直组装,以制造一类新型的范德华异质结构,其厚度为几个原子层,与多种衬底和光电器件几何结构兼容,从而为控制光与物质的耦合提供了新策略。在此,我们将二硒化钼/六方氮化硼(MoSe2/hBN)量子阱纳入可调谐光学微腔中。由于MoSe2激子与腔光子之间的强耦合,观察到了部分光部分物质的极化激元本征态,对于单个MoSe2单层,中性激子与腔模之间有明显的反交叉,分裂为20 meV,在MoSe2/hBN/MoSe2双量子阱中增强到29 meV,这证明了这一点。共振时的分裂给出了激子辐射寿命为0.4 ps的估计值。我们的结果为基于多量子阱范德华异质结构的室温极化激元器件铺平了道路,在这种器件中,通过引入石墨烯接触可能实现极化激元凝聚和电极化激元注入。