Råsander M, Moram M A
Department of Materials, Imperial College London, SW7 2AZ London, United Kingdom.
J Chem Phys. 2015 Oct 14;143(14):144104. doi: 10.1063/1.4932334.
We have performed density functional calculations using a range of local and semi-local as well as hybrid density functional approximations of the structure and elastic constants of 18 semiconductors and insulators. We find that most of the approximations have a very small error in the lattice constants, of the order of 1%, while the errors in the elastic constants and bulk modulus are much larger, at about 10% or better. When comparing experimental and theoretical lattice constants and bulk modulus we have included zero-point phonon effects. These effects make the experimental reference lattice constants 0.019 Å smaller on average while making the bulk modulus 4.3 GPa stiffer on average. According to our study, the overall best performing density functional approximations for determining the structure and elastic properties are the PBEsol functional, the two hybrid density functionals PBE0 and HSE (Heyd, Scuseria, and Ernzerhof), as well as the AM05 functional.
我们使用一系列局域、半局域以及杂化密度泛函近似方法,对18种半导体和绝缘体的结构与弹性常数进行了密度泛函计算。我们发现,大多数近似方法在晶格常数上的误差非常小,约为1%,而弹性常数和体模量的误差则大得多,约为10%或更小。在比较实验值和理论值的晶格常数与体模量时,我们考虑了零点声子效应。这些效应使得实验参考晶格常数平均减小0.019 Å,同时使体模量平均增加4.3 GPa。根据我们的研究,用于确定结构和弹性性质的总体表现最佳的密度泛函近似方法是PBEsol泛函、两种杂化密度泛函PBE0和HSE(Heyd、Scuseria和Ernzerhof)以及AM05泛函。