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用于硬X射线光学的菲涅耳波带片长宽比限制的模拟与实验研究。

Simulation and experimental study of aspect ratio limitation in Fresnel zone plates for hard-x-ray optics.

作者信息

Liu Jianpeng, Shao Jinhai, Zhang Sichao, Ma Yaqi, Taksatorn Nit, Mao Chengwen, Chen Yifang, Deng Biao, Xiao Tiqiao

出版信息

Appl Opt. 2015 Nov 10;54(32):9630-6. doi: 10.1364/AO.54.009630.

Abstract

For acquiring high-contrast and high-brightness images in hard-x-ray optics, Fresnel zone plates with high aspect ratios (zone height/zone width) have been constantly pursued. However, knowledge of aspect ratio limits remains limited. This work explores the achievable aspect ratio limit in polymethyl methacrylate (PMMA) by electron-beam lithography (EBL) under 100 keV, and investigates the lithographic factors for this limitation. Both Monte Carlo simulation and EBL on thick PMMA are applied to investigate the profile evolution with exposure doses over 100 nm wide dense zones. A high-resolution scanning electron microscope at low acceleration mode for charging free is applied to characterize the resultant zone profiles. It was discovered for what we believe is the first time that the primary electron-beam spreading in PMMA and the proximity effect due to extra exposure from neighboring areas could be the major causes of limiting the aspect ratio. Using the optimized lithography condition, a 100 nm zone plate with aspect ratio of 15/1 was fabricated and its focusing property was characterized at the Shanghai Synchrotron Radiation Facility. The aspect ratio limit found in this work should be extremely useful for guiding further technical development in nanofabrication of high-quality Fresnel zone plates.

摘要

为了在硬X射线光学中获取高对比度和高亮度的图像,人们一直在追求具有高纵横比(区域高度/区域宽度)的菲涅耳波带片。然而,关于纵横比限制的知识仍然有限。这项工作探索了在100 keV下通过电子束光刻(EBL)在聚甲基丙烯酸甲酯(PMMA)中可实现的纵横比极限,并研究了造成这种限制的光刻因素。蒙特卡罗模拟和对厚PMMA进行的电子束光刻都被用于研究在宽度超过100 nm的密集区域上曝光剂量与轮廓演变的关系。使用低加速模式下的高分辨率扫描电子显微镜以避免充电效应来表征所得的波带轮廓。我们首次发现,PMMA中的初级电子束散射以及相邻区域额外曝光引起的邻近效应可能是限制纵横比的主要原因。利用优化的光刻条件,制作了纵横比为15/1的100 nm波带片,并在上海同步辐射装置上对其聚焦特性进行了表征。这项工作中发现的纵横比极限对于指导高质量菲涅耳波带片纳米制造的进一步技术发展应该极为有用。

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