Tian Zhengshan, Li Jitao, Zhu Gangyi, Lu Junfeng, Wang Yueyue, Shi Zengliang, Xu Chunxiang
School of Chemistry and Chemical Engineering, Pingdingshan University, Pingdingshan 467000, P. R. China.
State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, P. R. China.
Phys Chem Chem Phys. 2016 Jan 14;18(2):1125-30. doi: 10.1039/c5cp05475c.
A facile hydrothermal strategy to synthesize sulfur-doped reduced graphene oxide (S-RGO) sheets with good conductivity is proposed by using only graphene oxide (GO) sheets and sodium sulphide (Na2S) as precursors through a hydrothermal reaction process at 200 °C in one pot. The introduced Na2S can act as not only a sulfur dopant, but also as a highly efficient reducing agent in the formation of S-RGO sheets, which dramatically improves the electrical conductivities of the resulting S-RGO sheets compared with previous reports. The current reaches about 50.0 mA at an applied bias of 2.0 V for the optimized sample with 2.22 at% sulfur doping. This current value is much higher than that of RGO sheets (∼1.2 mA) annealed at 200 °C, and very close to that of single-layer graphene sheets (∼68.0 mA) prepared using chemical vapor deposition under the same test conditions. The resulting highly conductive S-RGO sheets offer many promising technological applications such as efficient metal-free electrocatalysts in oxygen reduction reactions in fuel cells and as supercapacitor electrode materials for high-performance Li-ion batteries.
提出了一种简便的水热策略,仅使用氧化石墨烯(GO)片和硫化钠(Na₂S)作为前驱体,通过在200℃下于一锅进行水热反应过程,来合成具有良好导电性的硫掺杂还原氧化石墨烯(S-RGO)片。引入的Na₂S不仅可以作为硫掺杂剂,还可以在S-RGO片的形成过程中作为高效还原剂,与先前的报道相比,这极大地提高了所得S-RGO片的电导率。对于硫掺杂量为2.22 at%的优化样品,在2.0 V的施加偏压下电流达到约50.0 mA。该电流值远高于在200℃退火的RGO片(约1.2 mA),并且非常接近在相同测试条件下使用化学气相沉积制备的单层石墨烯片(约68.0 mA)。所得的高导电S-RGO片具有许多有前景的技术应用,例如在燃料电池的氧还原反应中作为高效的无金属电催化剂,以及作为高性能锂离子电池的超级电容器电极材料。