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从固定细胞到钉床上的运动细胞:垂直纳米线阵列密度对细胞行为的影响。

From immobilized cells to motile cells on a bed-of-nails: effects of vertical nanowire array density on cell behaviour.

作者信息

Persson Henrik, Li Zhen, Tegenfeldt Jonas O, Oredsson Stina, Prinz Christelle N

机构信息

Division of Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden.

NanoLund, Lund University, Box 118, 22100 Lund, Sweden.

出版信息

Sci Rep. 2015 Dec 22;5:18535. doi: 10.1038/srep18535.

Abstract

The field of vertical nanowire array-based applications in cell biology is growing rapidly and an increasing number of applications are being explored. These applications almost invariably rely on the physical properties of the nanowire arrays, creating a need for a better understanding of how their physical properties affect cell behaviour. Here, we investigate the effects of nanowire density on cell migration, division and morphology for murine fibroblasts. Our results show that few nanowires are sufficient to immobilize cells, while a high nanowire spatial density enables a "bed-of-nails" regime, where cells reside on top of the nanowires and are fully motile. The presence of nanowires decreases the cell proliferation rate, even in the "bed-of-nails" regime. We show that the cell morphology strongly depends on the nanowire density. Cells cultured on low (0.1 μm(-2)) and medium (1 μm(-2)) density substrates exhibit an increased number of multi-nucleated cells and micronuclei. These were not observed in cells cultured on high nanowire density substrates (4 μm(-2)). The results offer important guidelines to minimize cell-function perturbations on nanowire arrays. Moreover, these findings offer the possibility to tune cell proliferation and migration independently by adjusting the nanowire density, which may have applications in drug testing.

摘要

基于垂直纳米线阵列的细胞生物学应用领域正在迅速发展,并且正在探索越来越多的应用。这些应用几乎无一例外地依赖于纳米线阵列的物理特性,这就需要更好地理解其物理特性如何影响细胞行为。在这里,我们研究了纳米线密度对小鼠成纤维细胞迁移、分裂和形态的影响。我们的结果表明,少量纳米线就足以固定细胞,而高纳米线空间密度则能形成一种“钉床”状态,即细胞位于纳米线顶部且具有完全的运动能力。即使在“钉床”状态下,纳米线的存在也会降低细胞增殖率。我们表明,细胞形态强烈依赖于纳米线密度。在低密度(0.1μm(-2))和中密度(1μm(-2))底物上培养的细胞表现出多核细胞和微核数量增加。在高纳米线密度底物(4μm(-2))上培养的细胞中未观察到这些情况。这些结果为最小化纳米线阵列上的细胞功能扰动提供了重要指导。此外,这些发现提供了通过调整纳米线密度独立调节细胞增殖和迁移的可能性,这可能在药物测试中有应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dd6d/4686997/ac1ddb13e456/srep18535-f6.jpg

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