Africh Cristina, Cepek Cinzia, Patera Laerte L, Zamborlini Giovanni, Genoni Pietro, Menteş Tevfik O, Sala Alessandro, Locatelli Andrea, Comelli Giovanni
IOM-CNR Laboratorio TASC, Area Science Park, s.s. 14 km 163.5, Basovizza, 34149 Trieste, Italy.
Department of Physics, Università degli Studi di Trieste, via Alfonso Valerio 2, 34127 Trieste, Italy.
Sci Rep. 2016 Jan 25;6:19734. doi: 10.1038/srep19734.
Control over the film-substrate interaction is key to the exploitation of graphene's unique electronic properties. Typically, a buffer layer is irreversibly intercalated "from above" to ensure decoupling. For graphene/Ni(111) we instead tune the film interaction "from below". By temperature controlling the formation/dissolution of a carbide layer under rotated graphene domains, we reversibly switch graphene's electronic structure from semi-metallic to metallic. Our results are relevant for the design of controllable graphene/metal interfaces in functional devices.
控制薄膜与衬底之间的相互作用是利用石墨烯独特电子特性的关键。通常,会从“上方”不可逆地插入一个缓冲层以确保解耦。对于石墨烯/Ni(111)体系,我们改为从“下方”调节薄膜相互作用。通过温度控制旋转石墨烯畴下方碳化物层的形成/溶解,我们可将石墨烯的电子结构从半金属态可逆地转变为金属态。我们的结果对于功能器件中可控石墨烯/金属界面的设计具有重要意义。