在具有粗糙特征的衬底上转移石墨烯的合理策略。

A Rational Strategy for Graphene Transfer on Substrates with Rough Features.

机构信息

Department of Electrical Engineeringand Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA.

Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA.

出版信息

Adv Mater. 2016 Mar 23;28(12):2382-92. doi: 10.1002/adma.201505527. Epub 2016 Jan 25.

DOI:10.1002/adma.201505527

PMID:26808866

Abstract

Graphene grown by chemical vapor deposition is transferred by a very simple, yet effective approach from the growth substrate onto substrates with rough features. This novel and facile method not only results in satisfactory transfer on substrates with terraces or grooves, but also gives rise to a successful result for uneven growth substrates.

摘要

化学气相沉积法生长的石墨烯通过一种非常简单但有效的方法从生长衬底转移到具有粗糙特征的衬底上。这种新颖且简单的方法不仅在具有梯田或凹槽的衬底上实现了令人满意的转移，而且在不均匀生长衬底上也取得了成功。