James Franck Institute , 929 East 57th Street, Chicago, Illinois 60637, United States.
ACS Nano. 2016 Feb 23;10(2):2121-7. doi: 10.1021/acsnano.5b06527. Epub 2016 Feb 1.
HgSe/CdS core/shell CQD are synthesized, and the changes in the optical absorption and luminescence are investigated. While HgSe quantum dots are naturally n-doped after synthesis, both as colloidal solutions and as films, the HgSe/CdS core/shell dots in solution lose the n-doping, as seen from the optical absorption in solution. However, n-doping is regained in films, and the intraband luminescence of the films of HgSe/CdS is greater than that of the cores. The shell also vastly improves the stability of the quantum dots films against sintering at 200 °C. After annealing at that temperature, the HgSe/CdS films retain a narrow intraband emission and sustain a higher laser power leading to brighter emission at 5 μm.
HgSe/CdS 核/壳 CQD 被合成,并且研究了其光学吸收和发光的变化。虽然 HgSe 量子点在合成后自然是 n 型掺杂的,无论是胶体溶液还是薄膜,但是在溶液中的 HgSe/CdS 核/壳点失去了 n 型掺杂,这可以从溶液中的光学吸收看出。然而,在薄膜中恢复了 n 型掺杂,并且 HgSe/CdS 的薄膜的内带发光比核的内带发光更大。壳还极大地提高了量子点薄膜在 200°C 下烧结的稳定性。在该温度下退火后,HgSe/CdS 薄膜保留了窄的内带发射,并维持更高的激光功率,从而在 5μm 处产生更亮的发射。