超薄 WSe2 单晶中的栅极优化热电功率因子。

Gate-Optimized Thermoelectric Power Factor in Ultrathin WSe2 Single Crystals.

机构信息

Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, the University of Tokyo , Tokyo 113-8656, Japan.

RIKEN Center for Emergent Matter Science (CEMS) , Wako 351-0198, Japan.

出版信息

Nano Lett. 2016 Mar 9;16(3):2061-5. doi: 10.1021/acs.nanolett.6b00075. Epub 2016 Feb 10.

DOI:10.1021/acs.nanolett.6b00075

PMID:26841275

Abstract

We report an electric field tuning of the thermopower in ultrathin WSe2 single crystals over a wide range of carrier concentration by using electric double-layer (EDL) technique. We succeeded in the optimization of power factor not only in the hole but also in the electron side, which has never been chemically accessed. The maximized values of power factor are one-order larger than that obtained by changing chemical composition, reflecting the clean nature of electrostatic doping.

摘要

我们通过电双层（EDL）技术报告了在超薄膜 WSe2 单晶中通过电场来大范围调节载流子浓度的热功率。我们不仅在空穴侧，而且在化学上从未接触过的电子侧成功优化了功率因数。功率因数的最大值比通过改变化学成分获得的值高出一个数量级，这反映了静电掺杂的清洁性质。