Mun Jihun, Kim Yeongseok, Kang Il-Suk, Lim Sung Kyu, Lee Sang Jun, Kim Jeong Won, Park Hyun Min, Kim Taesung, Kang Sang-Woo
School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi, 440-746, Korea.
Center for Vacuum Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea.
Sci Rep. 2016 Feb 23;6:21854. doi: 10.1038/srep21854.
Layered molybdenum disulphide was grown at a low-temperature of 350 °C using chemical vapour deposition by elaborately controlling the cluster size. The molybdenum disulphide grown under various sulphur-reaction-gas to molybdenum-precursor partial-pressure ratios were examined. Using spectroscopy and microscopy, the effect of the cluster size on the layered growth was investigated in terms of the morphology, grain size, and impurity incorporation. Triangular single-crystal domains were grown at an optimized sulphur-reaction-gas to molybdenum-precursor partial-pressure ratio. Furthermore, it is proved that the nucleation sites on the silicon-dioxide substrate were related with the grain size. A polycrystalline monolayer with the 100-nm grain size was grown on a nucleation site confined substrate by high-vacuum annealing. In addition, a field-effect transistor was fabricated with a MoS2 monolayer and exhibited a mobility and on/off ratio of 0.15 cm(2) V(-1) s(-1) and 10(5), respectively.
通过精心控制团簇尺寸，采用化学气相沉积法在350 °C的低温下生长了层状二硫化钼。研究了在不同硫反应气体与钼前驱体分压比下生长的二硫化钼。利用光谱学和显微镜技术，从形貌、晶粒尺寸和杂质掺入方面研究了团簇尺寸对层状生长的影响。在优化的硫反应气体与钼前驱体分压比下生长出了三角形单晶畴。此外，还证明了二氧化硅衬底上的成核位点与晶粒尺寸有关。通过高真空退火在成核位点受限的衬底上生长出了具有100纳米晶粒尺寸的多晶单层。此外，用MoS2单层制作了场效应晶体管，其迁移率和开/关比分别为0.15 cm² V⁻¹ s⁻¹ 和10⁵ 。
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