同时选择性区域和气相-液相-固相生长磷化铟纳米线阵列。

Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays.

机构信息

Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia.

St. Petersburg Academic University , Khlopina 8/3, 194021 St. Petersburg, Russia.

出版信息

Nano Lett. 2016 Jul 13;16(7):4361-7. doi: 10.1021/acs.nanolett.6b01461. Epub 2016 Jun 6.

DOI:10.1021/acs.nanolett.6b01461

PMID:27253040

Abstract

Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III-V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control of nanowire properties but the growth mechanisms remain rather unclear. Herein, we report a detailed growth study revealing that fundamental growth mechanisms of pure wurtzite InP ⟨111⟩A nanowires can indeed differ significantly from the simple picture of a facet-limited selective-area growth process. A dual growth regime with and without metallic droplet is found to coexist under the same growth conditions for different diameter nanowires. Incubation times and highly nonmonotonous growth rate behaviors are revealed and explained within a dedicated kinetic model.

摘要

选择性区域外延在不使用金属催化剂的情况下，非常成功地生产出具有应用准备尺寸均匀的 III-V 纳米线阵列。以前的工作已经证明了对纳米线性能的出色控制，但生长机制仍然相当不清楚。在此，我们报告了一项详细的生长研究，揭示了纯纤锌矿 InP ⟨111⟩A 纳米线的基本生长机制实际上可能与面限制选择性区域生长过程的简单情况有很大不同。在相同的生长条件下，发现不同直径的纳米线共存着有和没有金属液滴的双生长阶段。在专门的动力学模型中，揭示并解释了孵育时间和高度非单调的生长速率行为。