Li Haipeng, Xu Hu, Shen Xiaopeng, Han Kui, Bi Zetong, Xu Runfeng
Department of Physics, China University of Mining and Technology, Xuzhou, 221116, China.
Department of Physics, South University of Science and Technology of China, Shenzhen, 518055, China.
Sci Rep. 2016 Jun 16;6:28067. doi: 10.1038/srep28067.
We investigated the electronic properties and second hyperpolarizabilities of hydrogenated silicon nanoclusters (H-SiNCs) by using the density functional theory method. The effects of cluster size, external electric field and incident frequency on the second hyperpolarizability were also examined, respectively. We found that small H-SiNCs exhibit large second hyperpolarizability. With the increase of the number of silicon atoms in H-SiNCs, the frontier molecular orbital energy gap decreases, attributed to the enhancement of the second hyperpolarizability. Interestingly, we also found the electric-field-induced gigantic enhancement of the second hyperpolarizability for H-SiNCs due to the change of electron density distributions. In addition, our results demonstrate a significant dependence on the frequency of incident light.
我们采用密度泛函理论方法研究了氢化硅纳米团簇(H-SiNCs)的电子性质和二阶超极化率。分别考察了团簇尺寸、外电场和入射频率对二阶超极化率的影响。我们发现小尺寸的H-SiNCs表现出较大的二阶超极化率。随着H-SiNCs中硅原子数目的增加,前线分子轨道能隙减小,这归因于二阶超极化率的增强。有趣的是,由于电子密度分布的变化,我们还发现了外电场诱导的H-SiNCs二阶超极化率的巨大增强。此外,我们的结果表明二阶超极化率对入射光频率有显著依赖性。