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掺杂对晶体表面和晶格的调制:实现锐钛矿 TiO 中超快的金属离子嵌入。

Modulation of Crystal Surface and Lattice by Doping: Achieving Ultrafast Metal-Ion Insertion in Anatase TiO.

机构信息

School of Chemical and Biomedical Engineering, Nanyang Technological University , Block N1.2, 62 Nanyang Drive, Singapore 637459, Singapore.

TUM CREATE , 1 CREATE Way, #10-02 CREATE Tower, Singapore 138602, Singapore.

出版信息

ACS Appl Mater Interfaces. 2016 Oct 26;8(42):29186-29193. doi: 10.1021/acsami.6b11185. Epub 2016 Oct 18.

Abstract

We report that an ultrafast kinetics of reversible metal-ion insertion can be realized in anatase titanium dioxide (TiO). Niobium ions (Nb) were carefully chosen to dope and drive anatase TiO into very thin nanosheets standing perpendicularly onto transparent conductive electrode (TCE) and simultaneously construct TiO with an ion-conducting surface together with expanded ion diffusion channels, which enabled ultrafast metal ions to diffuse across the electrolyte/solid interface and into the bulk of TiO. To demonstrate the superior metal-ion insertion rate, the electrochromic features induced by ion intercalation were examined, which exhibited the best color switching speed of 4.82 s for coloration and 0.91 s for bleaching among all reported nanosized TiO devices. When performed as the anode for the secondary battery, the modified TiO was capable to deliver a highly reversible capacity of 61.2 mAh/g at an ultrahigh specific current rate of 60 C (10.2 A/g). This fast metal-ion insertion behavior was systematically investigated by the well-controlled electrochemical approaches, which quantitatively revealed both the enhanced surface kinetics and bulk ion diffusion rate. Our study could provide a facile methodology to modulate the ion diffusion kinetics for metal oxides.

摘要

我们报告称,锐钛矿二氧化钛 (TiO) 可以实现超快的可逆金属离子插入动力学。选择铌离子 (Nb) 进行掺杂,将锐钛矿 TiO 驱动成非常薄的纳米片,垂直于透明导电电极 (TCE),同时构建具有离子导电表面和扩展离子扩散通道的 TiO,使超快金属离子能够穿过电解质/固体界面并扩散到 TiO 的体相。为了证明优越的金属离子插入率,研究了离子嵌入引起的电致变色特性,其在所有报道的纳米 TiO 器件中表现出最好的颜色转换速度,着色为 4.82 s,褪色为 0.91 s。当用作二次电池的阳极时,改性 TiO 能够在超高比电流速率 60 C(10.2 A/g)下提供高达 61.2 mAh/g 的高可逆容量。通过控制良好的电化学方法系统地研究了这种快速的金属离子插入行为,定量揭示了增强的表面动力学和体相离子扩散速率。我们的研究为调节金属氧化物的离子扩散动力学提供了一种简便的方法。

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