Kim Honggyu, Meng Yifei, Rouviére Jean-Luc, Zuo Jian-Min
Dept of Materials Science and Engineering, University of Illinois, Urbana, IL 61801, USA; Seitz Materials Research Laboratory, University of Illinois, Urbana, IL 61801, USA.
CEA/INAC/SP2M/LEMMA, 19 rue des Martyrs, 38 054 Grenoble, France.
Micron. 2017 Jan;92:6-12. doi: 10.1016/j.micron.2016.10.003. Epub 2016 Oct 21.
We report on a direct measurement of cation and anion sub-lattice strain in an InAs/GaSb type-II strained layer superlattice (T2SLs) using atomic resolution imaging and advanced image processing. Atomic column positions in InAs and GaSb are determined by separating the cation and anion peak intensities. Analysis of the InAs/GaSb T2SLs reveals the compressive strain in the nominal GaSb layer and tensile strain at interfaces between constituent layers, which indicate In incorporation into the nominal GaSb layer and the formation of GaAs like interfaces, respectively. The results are compared with the model-dependent X-ray diffraction measurements in terms of interfacial chemical intermixing and strain. Together, these techniques provide a robust measurement of atomic-scale strain which is vital to determine T2SL properties.
我们报告了一项利用原子分辨率成像和先进图像处理技术对InAs/GaSb II型应变层超晶格（T2SLs）中的阳离子和阴离子亚晶格应变进行的直接测量。通过分离阳离子和阴离子的峰值强度来确定InAs和GaSb中的原子列位置。对InAs/GaSb T2SLs的分析揭示了名义GaSb层中的压缩应变以及组成层之间界面处的拉伸应变，这分别表明In掺入到名义GaSb层中以及形成了类似GaAs的界面。在界面化学混合和应变方面，将这些结果与基于模型的X射线衍射测量结果进行了比较。总之，这些技术提供了对原子尺度应变的可靠测量，这对于确定T2SLs的性质至关重要。
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