Tsai Tsung-Yan, Yan Po-Ruei, Yang Sheng-Hsiung
Institute of Lighting and Energy Photonics, National Chiao Tung University, No. 301, Gaofa 3rd Road, Guiren District, Tainan, 71150, Taiwan, Republic of China.
Nanoscale Res Lett. 2016 Dec;11(1):516. doi: 10.1186/s11671-016-1733-x. Epub 2016 Nov 24.
The goal of this research is to prepare inverted light-emitting devices with improved performance by combining titanium dioxide (TiO) nanorods and tungsten trioxide (WO) layer. TiO nanorods with different lengths were established directly on the fluorine-doped tin oxide (FTO) substrates by the hydrothermal method. The prepared TiO nanorods with lengths shorter than 200 nm possess transmittance higher than 80% in the visible range. Inverted light-emitting devices with the configuration of FTO/TiO nanorods/ionic PF/MEH-PPV/PEDOT:PSS/WO/Au were constructed. The best device based on 100-nm-height TiO nanorods achieved a max brightness of 4493 cd/m and current efficiency of 0.66 cd/A, revealing much higher performance compared with those using TiO compact layer or nanorods with longer lengths as electron-transporting layers.
本研究的目标是通过结合二氧化钛(TiO)纳米棒和三氧化钨(WO)层来制备性能得到改善的倒置发光器件。采用水热法在氟掺杂氧化锡(FTO)衬底上直接制备了不同长度的TiO纳米棒。制备的长度小于200 nm的TiO纳米棒在可见光范围内的透过率高于80%。构建了具有FTO/TiO纳米棒/离子PF/MEH-PPV/PEDOT:PSS/WO/Au结构的倒置发光器件。基于100 nm高的TiO纳米棒的最佳器件实现了4493 cd/m的最大亮度和0.66 cd/A的电流效率,与使用TiO致密层或更长长度的纳米棒作为电子传输层的器件相比,性能有了显著提高。