School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology , Ulsan 689-798, Korea.
ACS Appl Mater Interfaces. 2016 Dec 14;8(49):33955-33962. doi: 10.1021/acsami.6b12574. Epub 2016 Dec 5.
van der Waals heterostructures based on stacked two-dimensional (2D) materials provide novel device structures enabling high-performance electronic and optoelectronic devices. While 2D-2D or 2D-bulk heterostructures have been largely explored for fundamental understanding and novel device applications, 2D-one-dimensional (1D) heterostructures have been rarely studied because of the difficulty in achieving high-quality heterojunctions between 2D and 1D structures. In this study, we introduce nanosheet-on-1D van der Waals heterostructure photodetectors based on a wet-transfer printing of a MoS nanosheet on top of a CuO nanowire (NW). MoS/CuO nanosheet-on-1D photodetectors show an excellent photocurrent rectification ratio with an ideality factor of 1.37, which indicates the formation of an atomically sharp interface and a high-quality heterojunction in the MoS/CuO heterostructure by wet-transfer-enhanced van der Waals bonding. Furthermore, nanosheet-on-1D heterojunction photodetectors exhibit excellent photodetection capabilities with an ultrahigh photoresponsivity (∼157.6 A/W), a high rectification ratio (∼6000 at ±2 V), a low dark current (∼38 fA at -2 V), and a fast photoresponse time (∼34.6 and 51.9 ms of rise and decay time), which cannot be achievable with 1D-on-nanosheet heterojunction photodetectors. The wet-transfer printing of nanosheet-on-1D heterostructures introduced in this study provides a robust platform for the fundamental study of various combinations of 2D-on-1D heterostructures and their applications in novel heterojunction devices.
基于堆叠二维(2D)材料的范德华异质结构为高性能电子和光电子器件提供了新颖的器件结构。虽然 2D-2D 或 2D-体异质结构已经在很大程度上得到了探索,以用于基础理解和新型器件应用,但由于在 2D 和 1D 结构之间实现高质量异质结的困难,2D-一维(1D)异质结构很少被研究。在这项研究中,我们介绍了基于 MoS 纳米片在 CuO 纳米线(NW)顶部的湿转移打印的纳米片-1D 范德华异质结构光电探测器。MoS/CuO 纳米片-1D 光电探测器具有优异的光电流整流比,理想因子为 1.37,这表明通过湿转移增强的范德华键合在 MoS/CuO 异质结构中形成了原子级锋利的界面和高质量的异质结。此外,纳米片-1D 异质结光电探测器具有优异的光电检测性能,超高光响应率(约 157.6 A/W),高整流比(约 6000 在 ±2 V),低暗电流(约 38 fA 在-2 V)和快速光响应时间(约 34.6 和 51.9 ms 的上升和下降时间),这是一维-纳米片异质结光电探测器无法实现的。本研究中引入的纳米片-1D 异质结构的湿转移打印为各种 2D-1D 异质结构的组合及其在新型异质结器件中的应用的基础研究提供了一个强大的平台。