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两种基于噻吩的基准共轭聚合物的中子辐射耐受性:结晶度对有机航空电子学的重要性。

Neutron Radiation Tolerance of Two Benchmark Thiophene-Based Conjugated Polymers: the Importance of Crystallinity for Organic Avionics.

机构信息

London Centre for Nanotechnology, Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, UK.

ISIS Pulsed Neutron and Muon Source, Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Science and Innovation Campus, Didcot OX11 0QX, UK.

出版信息

Sci Rep. 2017 Jan 23;7:41013. doi: 10.1038/srep41013.

Abstract

Aviation and space applications can benefit significantly from lightweight organic electronics, now spanning from displays to logics, because of the vital importance of minimising payload (size and mass). It is thus crucial to assess the damage caused to such materials by cosmic rays and neutrons, which pose a variety of hazards through atomic displacements following neutron-nucleus collisions. Here we report the first study of the neutron radiation tolerance of two poly(thiophene)s-based organic semiconductors: poly(3-hexylthiophene-2,5-diyl), P3HT, and the liquid-crystalline poly(2,5-bis (3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT. We combine spectroscopic investigations with characterisation of intrinsic charge mobility to show that PBTTT exhibits significantly higher tolerance than P3HT. We explain this in terms of a superior chemical, structural and conformational stability of PBTTT, which can be ascribed to its higher crystallinity, in turn induced by a combination of molecular design features. Our approach can be used to develop design strategies for better neutron radiation-tolerant materials, thus paving the way for organic semiconductors to enter avionics and space applications.

摘要

航空航天应用可以从重量轻的有机电子产品中显著受益,这些电子产品现在从显示器扩展到逻辑电路,因为最小化有效载荷(大小和质量)至关重要。因此,评估宇宙射线和中子对这些材料造成的损害至关重要,中子与核碰撞会导致原子位移,从而带来各种危害。在这里,我们报告了对两种基于聚噻吩的有机半导体的首次中子辐射耐受性研究:聚(3-己基噻吩-2,5-二基),P3HT,和液晶聚(2,5-双(3-十四烷基噻吩-2-基)噻吩[3,2-b]噻吩),PBTTT。我们将光谱研究与固有电荷迁移率的表征相结合,表明 PBTTT 比 P3HT 具有更高的耐受性。我们从 PBTTT 的化学、结构和构象稳定性方面解释了这一点,这归因于其更高的结晶度,这反过来又归因于分子设计特征的结合。我们的方法可以用于开发更好的耐中子辐射材料的设计策略,从而为有机半导体进入航空电子和太空应用铺平道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bcc3/5253652/81073377647f/srep41013-f1.jpg

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