基于无镉 InP/ZnSeS/ZnS 异质结构量子点的发光二极管，具有 ZnMgO 电子传输层，亮度超过 10000 cd/m²。

Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m.

机构信息

Department of Chemistry, National Taiwan University, Taipei, 106, Taiwan.

Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.

出版信息

Small. 2017 Apr;13(13). doi: 10.1002/smll.201603962. Epub 2017 Jan 31.

DOI:10.1002/smll.201603962

PMID:28139872

Abstract

Cadmium-free thick-shelled InP/ZnSeS/ZnS quantum dot (QD) was synthesized using the heating-up approach. This quantum dots was used in inverted quantum dots light emitting diode (QLED) devices. The brightness of the inverted QLED device can reach a brightness of over 10 000 cd m , low turn-on voltage (2.2 V), and high power efficiency (4.32 lm W ).

摘要

采用升温法合成了无镉厚壳 InP/ZnSeS/ZnS 量子点 (QD)。该量子点应用于倒装量子点发光二极管 (QLED) 器件中。倒装 QLED 器件的亮度可达 10000 cd/m 以上，开启电压低 (2.2 V)，功率效率高 (4.32 lm/W)。