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AlGaAs光学纳米天线中二次谐波产生的偏振特性。

Polarization properties of second-harmonic generation in AlGaAs optical nanoantennas.

作者信息

Ghirardini L, Carletti L, Gili V, Pellegrini G, Duò L, Finazzi M, Rocco D, Locatelli A, De Angelis C, Favero I, Ravaro M, Leo G, Lemaître A, Celebrano M

出版信息

Opt Lett. 2017 Feb 1;42(3):559-562. doi: 10.1364/OL.42.000559.

Abstract

Manipulating light at the nanoscale by means of dielectric nanoantennas recently received renewed attention thanks to the development of key enabling fabrication tools in semiconductor technology, combined with the extremely low losses exhibited by dielectrics in the optical regime. Nanostructures based on III-V type semiconductors, characterized by an intrinsic broken symmetry down to a single elementary cell, has already demonstrated remarkable nonlinear conversion efficiencies at scales well below the operating wavelength. In this Letter, we thoroughly investigate the emission properties of second-harmonic generation (SHG) in AlGaAs monolithic nanoantennas. Our findings point toward the pivotal role of volume susceptibility in SHG, further unraveling the physics behind the nonlinear processes in these systems. The extremely high SHG efficiency attained, together with the control over the polarized emission in these nanoantennas, constitute key ingredients for the development of tunable nonlinear metasurfaces.

摘要

借助介电纳米天线在纳米尺度上操纵光,近来由于半导体技术中关键制造工具的发展,再加上电介质在光学波段表现出的极低损耗,而重新受到关注。基于III-V族半导体的纳米结构,其特征是在单个基本单元层面就具有内在的对称性破缺,已经在远低于工作波长的尺度上展现出了卓越的非线性转换效率。在本信函中,我们深入研究了AlGaAs单片纳米天线中二次谐波产生(SHG)的发射特性。我们的研究结果表明了体极化率在二次谐波产生中的关键作用,进一步揭示了这些系统中非线性过程背后的物理原理。所实现的极高二次谐波产生效率,以及对这些纳米天线中偏振发射的控制,构成了可调谐非线性超表面发展的关键要素。

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